公开(公告)号：US20220278242A1

公开(公告)日：2022-09-01

申请号：US17744398

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han LIN ,  Chao-Ching CHANG ,  Yi-Ming LIN ,  Yen-Ting CHOU ,  Yen-Chang CHEN ,  Sheng-Chan LI ,  Cheng-Hsien CHOU

IPC: H01L31/0216 ,  H01L31/18 ,  H01L27/146 ,  H01L31/0232

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.

公开(公告)号：US20180366369A1

公开(公告)日：2018-12-20

申请号：US15623481

申请日：2017-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han LIN ,  Han-Sheng WENG ,  Chao-Ching CHANG ,  Jian-Shin TSAI ,  Yi-Ming LIN ,  Min-Hui LIN

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/48 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76834 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53242 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/53295 ,  H01L23/535

Abstract: A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).

公开(公告)号：US20210050460A1

公开(公告)日：2021-02-18

申请号：US16845005

申请日：2020-04-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han LIN ,  Chao-Ching CHANG ,  Yi-Ming LIN ,  Yen-Ting CHOU ,  Yen-Chang CHEN ,  Sheng-Chan LI ,  Cheng-Hsien CHOU

IPC: H01L31/0216 ,  H01L31/0232 ,  H01L27/146 ,  H01L31/18

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.

公开(公告)号：US20230369516A1

公开(公告)日：2023-11-16

申请号：US18354536

申请日：2023-07-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han LIN ,  Chao-Ching CHANG ,  Yi-Ming LIN ,  Yen-Ting CHOU ,  Yen-Chang CHEN ,  Sheng-Chan LI ,  Cheng-Hsien CHOU

IPC: H01L31/0216 ,  H01L31/18 ,  H01L27/146 ,  H01L31/0232

CPC classification number: H01L31/0216 ,  H01L31/18 ,  H01L27/14636 ,  H01L31/0232

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.