公开(公告)号：US11450757B2

公开(公告)日：2022-09-20

申请号：US17013615

申请日：2020-09-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Chang Lin ,  Chun-Feng Nieh ,  Huicheng Chang ,  Wei-Ting Chien ,  Chih-Pin Tsao ,  Hou-Ju Li ,  Tien-Shun Chang

IPC分类号： H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L27/092 ,  H01L21/225 ,  H01L21/324 ,  H01L29/08

摘要： A finFET device and methods of forming a finFET device are provided. The method includes depositing a dummy gate over and along sidewalls of a fin extending upwards from a semiconductor substrate, forming a first gate spacer along a sidewall of the dummy gate, and plasma-doping the first gate spacer with carbon to form a carbon-doped gate spacer. The method further includes forming a source/drain region adjacent a channel region of the fin and diffusing carbon from the carbon-doped gate spacer into a first region of the fin to provide a first carbon-doped region. The first carbon-doped region is disposed between at least a portion of the source/drain region and the channel region of the fin.

公开(公告)号：US11264380B2

公开(公告)日：2022-03-01

申请号：US16112943

申请日：2018-08-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hou-Ju Li ,  Chur-Shyang Fu ,  Chun-Sheng Liang ,  Jeng-Ya David Yeh

IPC分类号： H01L27/088 ,  H01L29/08 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/3213

摘要： A semiconductor device includes a substrate, a first active fin, a second active fin, a dummy fin and a first gate structure. The first and the second active fin are on the substrate and extend along a first direction. The dummy fin is disposed between the first active fin and the second active fin, and extends in the first direction. The dummy fin includes a plurality of layers, and each of the layers includes a material different from another layer. The first gate structure crosses over the dummy fin, the first and the second active fins.

公开(公告)号：US11776911B2

公开(公告)日：2023-10-03

申请号：US17330834

申请日：2021-05-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hung-Ming Chen ,  Yu-Chang Lin ,  Chung-Ting Li ,  Jen-Hsiang Lu ,  Hou-Ju Li ,  Chih-Pin Tsao

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L23/535 ,  H01L21/768 ,  H01L29/417

CPC分类号： H01L23/535 ,  H01L21/76841 ,  H01L21/76897 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7848

摘要： A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.

公开(公告)号：US11024582B2

公开(公告)日：2021-06-01

申请号：US15489905

申请日：2017-04-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hung-Ming Chen ,  Yu-Chang Lin ,  Chung-Ting Li ,  Jen-Hsiang Lu ,  Hou-Ju Li ,  Chih-Pin Tsao

IPC分类号： H01L29/76 ,  H01L23/535 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768 ,  H01L29/417

摘要： A semiconductor device includes a substrate, a carbon-containing diffusion barrier, a phosphorus-containing source/drain feature, a gate structure, and a gate spacer. The substrate has a channel region. The carbon-containing diffusion barrier is present in the substrate. The phosphorus-containing source/drain feature is present in the substrate, and the carbon-containing diffusion barrier is between the channel region and the phosphorus-containing source/drain feature. The gate is present over the channel region of the substrate. The gate spacer abuts the gate structure and is present over a portion of the phosphorus-containing source/drain feature.

公开(公告)号：US20180301417A1

公开(公告)日：2018-10-18

申请号：US15489905

申请日：2017-04-18

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hung-Ming Chen ,  Yu-Chang Lin ,  Chung-Ting Li ,  Jen-Hsiang Lu ,  Hou-Ju Li ,  Chih-Pin Tsao

IPC分类号： H01L23/535 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768

摘要： A semiconductor device includes a substrate, a carbon-containing diffusion barrier, a phosphorus-containing source/drain feature, a gate structure, and a gate spacer. The substrate has a channel region. The carbon-containing diffusion barrier is present in the substrate. The phosphorus-containing source/drain feature is present in the substrate, and the carbon-containing diffusion barrier is between the channel region and the phosphorus-containing source/drain feature. The gate is present over the channel region of the substrate. The gate spacer abuts the gate structure and is present over a portion of the phosphorus-containing source/drain feature.