公开(公告)号：US20200006085A1

公开(公告)日：2020-01-02

申请号：US16383539

申请日：2019-04-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Ya-Wen YEH ,  Yu-Tien SHEN ,  Shih-Chun HUANG ,  Po-Chin CHANG ,  Wei-Liang LIN ,  Yung-Sung YEN ,  Wei-Hao WU ,  Li-Te LIN ,  Pinyen LIN ,  Ru-Gun LIU

IPC分类号： H01L21/3213 ,  H01L21/66

摘要： In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

公开(公告)号：US20210096473A1

公开(公告)日：2021-04-01

申请号：US16587710

申请日：2019-09-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Ru-Gun LIU ,  Huicheng CHANG ,  Chia-Cheng CHEN ,  Jyu-Horng SHIEH ,  Liang-Yin CHEN ,  Shu-Huei SUEN ,  Wei-Liang LIN ,  Ya Hui CHANG ,  Yi-Nien SU ,  Yung-Sung YEN ,  Chia-Fong CHANG ,  Ya-Wen YEH ,  Yu-Tien SHEN

IPC分类号： G03F7/20 ,  H01L21/027

摘要： In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.

公开(公告)号：US20200335340A1

公开(公告)日：2020-10-22

申请号：US16921032

申请日：2020-07-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shih-Chun HUANG ,  Chiu-Hsiang CHEN ,  Ya-Wen YEH ,  Yu-Tien SHEN ,  Po-Chin CHANG ,  Chien Wen LAI ,  Wei-Liang LIN ,  Ya Hui CHANG ,  Yung-Sung YEN ,  Li-Te LIN ,  Pinyen LIN ,  Ru-Gun LIU ,  Chin-Hsiang LIN

IPC分类号： H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L21/265

摘要： A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.

公开(公告)号：US20190341254A1

公开(公告)日：2019-11-07

申请号：US16512336

申请日：2019-07-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shih-Chun HUANG ,  Chin-Hsiang LIN ,  Chien-Wen LAI ,  Ru-Gun LIU ,  Wei-Liang LIN ,  Ya Hui CHANG ,  Yung-Sung YEN ,  Yu-Tien SHEN ,  Ya-Wen YEH

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/3105

摘要： A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a plurality of openings in the multi-layer resist to expose a portion of the hard mask layer. Ion are directionally provided at an angle to the multi-layer resist to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In one embodiment, the multi-layer resist is directionally etched by directing etch ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In another embodiment, the multi-layer resist is directionally implanted by directing implant ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer.