公开(公告)号：US09658278B2

公开(公告)日：2017-05-23

申请号：US14163062

申请日：2014-01-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chun Hao Liao ,  Chu Fu Chen ,  Po-Ju Chiu ,  Jun Yean Chiou ,  Chao-Jen Cheng

IPC: H01L51/56 ,  H01L21/70 ,  G01R31/26 ,  G01R31/28 ,  H01L21/66

CPC classification number: G01R31/2648 ,  G01R31/2831 ,  H01L22/12 ,  H01L22/34

Abstract: A semiconductor device comprises a first layer, a second layer configured to overlap with the first layer at a plurality of positions, a plurality of first layer contacts configured to be selectively activated to test the first layer for a first layer leakage current, and a plurality of second layer contacts configured to be selectively activated to test the second layer for a second layer leakage current. The first layer contacts are arranged on the first layer on a first side and a second side of the plurality of positions at which the second layer overlaps with the first layer. The second layer contacts are arranged on the second layer on a third side and a fourth side of the plurality of positions at which the second layer overlaps with the first layer. A determined first layer leakage current or second layer leakage current is indicative of the presence of a crystal defect in the semiconductor device.