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1.发明公开公开(公告)号：US20230384680A1
公开(公告)日：2023-11-30
申请号：US18365529
申请日：2023-08-04
发明人： Wen-Zhan Zhou , Heng-Jen Lee , Hsu-Yuan Liu , Yu-Chen Huang , Cheng-Han Wu , Shih-Che Wang , Ho-Yung David Hwang
CPC分类号： G03F7/16 , B67D7/0294 , B67D7/36 , B67D7/78 , Y10T137/0318 , Y10T137/86187
摘要： A method of supplying a chemical solution to a photolithography system. The chemical solution is pumped from a variable-volume buffer tank. The pumped chemical solution is dispensed in a spin-coater. The variable-volume buffer tank is refilled by emptying a storage container filled with the chemical solution into the variable-volume buffer tank.
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2.发明申请公开(公告)号：US20130188164A1
公开(公告)日：2013-07-25
申请号：US13791542
申请日：2013-03-08
IPC分类号： G03B27/52 , H01L21/302
CPC分类号： G03B27/523 , G03B27/54 , G03F7/701 , H01L21/302
摘要： A method of photolithography including coupling a first aperture to a lithography system, then performing a first illumination process to form a first pattern on a layer of a substrate using the first aperture, thereafter coupling a second aperture to the lithography system, and performing a second illumination process to form a second pattern on the layer of the substrate using the second aperture. The first aperture includes a first pair and a second pair of radiation-transmitting regions. The second aperture includes a second plate having a third pair and a fourth pair of radiation-transmitting regions.
摘要翻译： 一种光刻方法，包括将第一孔耦合到光刻系统，然后执行第一照明处理，以使用第一孔在衬底的层上形成第一图案，之后将第二孔耦合到光刻系统，以及执行第二孔 使用第二孔在衬底的层上形成第二图案。 第一孔包括第一对和第二对辐射透射区。 第二孔包括具有第三对和第四对辐射透射区的第二板。
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公开(公告)号：US11955335B2
公开(公告)日：2024-04-09
申请号：US17883581
申请日：2022-08-08
发明人： Tung-Hung Feng , Hui-Chun Lee , Sheng-Wen Jiang , Shih-Che Wang
IPC分类号： H01L21/02 , G03F7/00 , G03F7/16 , H01L21/027 , H01L21/033 , H01L21/67 , H01L21/687
CPC分类号： H01L21/0274 , G03F7/162 , G03F7/70033 , H01L21/033 , H01L21/67017 , H01L21/67051 , H01L21/68764
摘要： In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.
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公开(公告)号：US11798800B2
公开(公告)日：2023-10-24
申请号：US17359038
申请日：2021-06-25
发明人： Chun-Wei Liao , Tung-Hung Feng , Hui-Chun Lee , Shih-Che Wang
CPC分类号： H01L21/02057 , G03F1/80 , H01L21/31133 , H01L21/6708
摘要： A solvent recycle system minimizes chemical consumption used in various semiconductor processes. The solvent is recycled from a nozzle bath via the addition of buffer tank to connect the bath and circulation pumps. Improvements to the bath design further maintain solvent cleanness by preventing intrusion of particles and overflow conditions in the bath.
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5.发明授权公开(公告)号：US09280041B2
公开(公告)日：2016-03-08
申请号：US13791542
申请日：2013-03-08
发明人： Hsien-Cheng Wang , Hung Chang Hsieh , Shih-Che Wang , Ping Chieh Wu , Wen-Chun Huang , Ming-Chang Wen
IPC分类号： G03B27/52 , G03B27/54 , G03F7/20 , H01L21/302
CPC分类号： G03B27/523 , G03B27/54 , G03F7/701 , H01L21/302
摘要： A method of photolithography including coupling a first aperture to a lithography system, then performing a first illumination process to form a first pattern on a layer of a substrate using the first aperture, thereafter coupling a second aperture to the lithography system, and performing a second illumination process to form a second pattern on the layer of the substrate using the second aperture. The first aperture includes a first pair and a second pair of radiation-transmitting regions. The second aperture includes a second plate having a third pair and a fourth pair of radiation-transmitting regions.
摘要翻译： 一种光刻方法，包括将第一孔耦合到光刻系统，然后执行第一照明处理，以使用第一孔在衬底的层上形成第一图案，之后将第二孔耦合到光刻系统，以及执行第二孔 使用第二孔在衬底的层上形成第二图案。 第一孔包括第一对和第二对辐射透射区。 第二孔包括具有第三对和第四对辐射透射区的第二板。
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