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公开(公告)号：US20230030411A1
公开(公告)日：2023-02-02
申请号：US17967499
申请日：2022-10-17
发明人： Chia-Hung CHU , Sung-Li WANG , Fang-Wei LEE , Jung-Hao CHANG , Mrunal Abhijith KHADERBAD , Keng-Chu LIN
IPC分类号： H01L29/78 , H01L29/66 , H01L21/311 , H01L21/8234 , H01L29/417 , H01L29/45 , H01L29/08 , H01L21/762 , H01L21/3065 , H01L21/3105 , H01L21/308 , H01L21/027 , H01L21/3213
摘要： A fin field effect transistor device structure includes a fin structure formed over a substrate. The fin field effect transistor device structure also includes a source/drain epitaxial structure formed over the fin structure. The fin field effect transistor device structure also includes a contact structure with a concave top surface formed over the source/drain epitaxial structure. The fin field effect transistor device structure also includes a barrier layer conformally wrapped around the contact structure. The fin field effect transistor device structure also includes a via structure formed over the contact structure. The concave top surface of the contact structure is below the top surface of the barrier layer.
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公开(公告)号：US20220085189A1
公开(公告)日：2022-03-17
申请号：US17532568
申请日：2021-11-22
发明人： Jung-Hao CHANG , Li-Te LIN , Pinyen LIN
IPC分类号： H01L29/66 , H01L21/8238 , H01L29/78 , H01L27/092 , H01L29/49 , H01L29/51
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a metal gate stack over the substrate. The metal gate stack has a gate dielectric layer and a work function layer over the gate dielectric layer. The semiconductor device structure also includes a spacer structure over a sidewall of the metal gate stack. A topmost surface of the gate dielectric layer is lower than a topmost surface of the spacer structure. The topmost surface of the gate dielectric layer is closer to the topmost surface of the spacer structure than a topmost surface of the work function layer.
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