公开(公告)号：US20240363417A1

公开(公告)日：2024-10-31

申请号：US18768844

申请日：2024-07-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Mrunal Abhijith KHADERBAD ,  Sathaiya Mahaveer DHANYAKUMAR ,  Huicheng CHANG ,  Keng-Chu LIN ,  Winnie Victoria Wei-Ning CHEN

IPC分类号： H01L21/822 ,  H01L21/8234 ,  H01L27/092

CPC分类号： H01L21/8221 ,  H01L21/823418 ,  H01L21/823481 ,  H01L27/092

摘要： A semiconductor device includes a first transistor device of a first type. The first transistor includes first nanostructures, a first pair of source/drain structures, and a first gate electrode on the first nanostructures. The semiconductor device also includes a second transistor device of a second type formed over the first transistor device. The second transistor device includes second nanostructures over the first nanostructures, a second pair of source/drain structures over the first pair or source/drain structures, and a second gate electrode on the second nanostructures and over the first nanostructures. The semiconductor device also includes a first isolation structure between the first and second nanostructures. The semiconductor device further includes a second isolation structure in contact with a top surface of the first pair of source/drain structures. The semiconductor device also includes a seed layer between the second isolation structure and the second pair of source/drain structures.

公开(公告)号：US20230009745A1

公开(公告)日：2023-01-12

申请号：US17370265

申请日：2021-07-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Cheng-Ming LIN ,  Han-Yu LIN ,  Wei-Yen WOON ,  Mrunal Abhijith KHADERBAD

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02

摘要： A semiconductor device includes a semiconductor feature, a low-k dielectric feature that is formed on the semiconductor feature, and a Si-containing layer that contains elements of silicon and that covers over the low-k dielectric feature. The Si-containing layer can prevent the low-k dielectric feature from being damaged in etch and/or annealing processes for manufacturing the semiconductor device.

公开(公告)号：US20230030411A1

公开(公告)日：2023-02-02

申请号：US17967499

申请日：2022-10-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chia-Hung CHU ,  Sung-Li WANG ,  Fang-Wei LEE ,  Jung-Hao CHANG ,  Mrunal Abhijith KHADERBAD ,  Keng-Chu LIN

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/45 ,  H01L29/08 ,  H01L21/762 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/308 ,  H01L21/027 ,  H01L21/3213

摘要： A fin field effect transistor device structure includes a fin structure formed over a substrate. The fin field effect transistor device structure also includes a source/drain epitaxial structure formed over the fin structure. The fin field effect transistor device structure also includes a contact structure with a concave top surface formed over the source/drain epitaxial structure. The fin field effect transistor device structure also includes a barrier layer conformally wrapped around the contact structure. The fin field effect transistor device structure also includes a via structure formed over the contact structure. The concave top surface of the contact structure is below the top surface of the barrier layer.

公开(公告)号：US20240170323A1

公开(公告)日：2024-05-23

申请号：US18427575

申请日：2024-01-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Mrunal Abhijith KHADERBAD ,  Ko-Feng Chen ,  Zheng-Yong Liang ,  Chen-Han Wang ,  De-Yang Chiou ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC分类号： H01L21/762 ,  H01L21/311 ,  H01L21/8234

CPC分类号： H01L21/76224 ,  H01L21/31116 ,  H01L21/823481

摘要： The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures

公开(公告)号：US20230282715A1

公开(公告)日：2023-09-07

申请号：US17685517

申请日：2022-03-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Jhih-Rong HUANG ,  Mrunal Abhijith KHADERBAD ,  Yi-Bo LIAO ,  Yen-Tien TUNG ,  Wei-Yen WOON

IPC分类号： H01L29/417 ,  H01L27/088

CPC分类号： H01L29/41725 ,  H01L27/088

摘要： A semiconductor structure includes a semiconductor substrate, a first source/drain portion, a second source/drain portion, a first metal contact, a second metal contact and a first conductive carbon layer. The first and second source/drain portions are formed over the semiconductor substrate, and are spaced apart from each other. The first source/drain portion has a conductivity type different from that of the second source/drain portion. The first and second metal contacts are respectively formed on the first and second source/drain portions. The first conductive carbon layer is formed between the first source/drain portion and the first metal contact.