公开(公告)号：US20240096923A1

公开(公告)日：2024-03-21

申请号：US18150806

申请日：2023-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： FENG-CHIEN HSIEH ,  YUN-WEI CHENG ,  WEI-LI HU ,  KUO-CHENG LEE ,  CHENG-MING WU

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14607 ,  H01L27/14689

Abstract: The image sensing structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes at least one first unit. The at least one first unit includes a plurality of first interconnects adjacent to the top side of the first semiconductor device, a row selector, and an analog-to-digital converter (ADC) connected to the row selectors. The second semiconductor device includes at least one second unit. The at least one second unit includes a photodiode facing the top side of the second semiconductor device. The photodiode is configured to receive the light incident on the top side of the second semiconductor device. The top side of the first semiconductor device is bonded to the bottom side of the second semiconductor device.

公开(公告)号：US20240113237A1

公开(公告)日：2024-04-04

申请号：US18152172

申请日：2023-01-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： FENG-CHIEN HSIEH ,  YUN-WEI CHENG ,  KUO-CHENG LEE ,  CHENG-MING WU ,  PING KUAN CHANG

IPC: H01L31/02 ,  H01L25/18 ,  H01L31/053 ,  H01L31/18

CPC classification number: H01L31/02008 ,  H01L25/18 ,  H01L31/02021 ,  H01L31/053 ,  H01L31/18

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.

公开(公告)号：US20240047487A1

公开(公告)日：2024-02-08

申请号：US17818344

申请日：2022-08-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： FENG-CHIEN HSIEH ,  YUN-WEI CHENG ,  WEI-LI HU ,  KUO-CHENG LEE ,  CHENG-MING WU

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/1461 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14621

Abstract: An image sensor device includes a semiconductor substrate having a first side, and a trench isolation structure dividing the substrate into sensing units. Each sensing unit includes a first gate electrode and a second gate electrode disposed on the first side, and a first pixel and a second pixel extending into the substrate and disposed between the first and second gate electrodes from a top view perspective. The first pixel is disposed under the second pixel and electrically connected to the first gate electrode, and the second pixel is electrically connected to the second gate electrode. A method of manufacturing a semiconductor structure includes forming a trench isolation in a semiconductor substrate; forming a first pixel in the substrate; forming a second pixel in the substrate over the first pixel; forming a first gate structure over the substrate; and forming a second gate structure over the second pixel.