THIN-FILM CAPACITOR
    1.
    发明申请
    THIN-FILM CAPACITOR 审中-公开

    公开(公告)号:US20190304701A1

    公开(公告)日:2019-10-03

    申请号:US16360405

    申请日:2019-03-21

    Abstract: A thin-film capacitor satisfies a relationship of CTE1>CTE2>CTE3 regarding a linear expansion coefficient CTE1 of a base, a linear expansion coefficient CTE2 of a capacitance unit, and a linear expansion coefficient CTE3 of a barrier layer. The inventors have newly found that in a case in which such a relationship is satisfied, when a temperature falls from a deposition temperature, cracking occurring in the capacitance unit of the thin-film capacitor is prevented, and cracking occurring in the barrier layer is also prevented.

    THIN-FILM CAPACITOR
    2.
    发明申请
    THIN-FILM CAPACITOR 审中-公开

    公开(公告)号:US20180102219A1

    公开(公告)日:2018-04-12

    申请号:US15725860

    申请日:2017-10-05

    Abstract: A thin-film capacitor including a stacked body having a lower electrode layer, a plurality of dielectric layers stacked on the lower electrode layer, one or more internal electrode layers interposed between the dielectric layers, and an upper electrode layer that is stacked on the opposite side of the lower electrode layer with the dielectric layers and the internal electrode layers interposed between, and a cover layer that covers the stacked body. The stacked body includes opening portions that have the lower electrode layer, opens upward in a stacking direction, and has a side surface formed to include an inclined surface. The cover layer is stacked on the inclined surface of the stacked body. A curved surface with a predetermined shape is formed on the inclined surface for each pair of layers including the dielectric layer forming the inclined surface and the electrode layer, forming the inclined surface.

    MANUFACTURING METHOD OF THIN FILM CAPACITOR AND THIN FILM CAPACITOR

    公开(公告)号:US20190279823A1

    公开(公告)日:2019-09-12

    申请号:US16294139

    申请日:2019-03-06

    Abstract: Provided is a manufacturing method of a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, the manufacturing method including a lamination process of alternately laminating the plurality of electrode layers and a dielectric film and forming a laminated body which will be the capacitance portion, a first etching process of forming an opening extending in a laminating direction with respect to the laminated body and exposing the dielectric film laminated directly on one of the plurality of electrode layers on a bottom surface of the opening, and a second etching process of exposing the one electrode layer at the bottom surface of the opening. In the second etching process, an etching rate of the one electrode layer is lower than an etching rate of the dielectric film.

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