公开(公告)号：US11201013B2

公开(公告)日：2021-12-14

申请号：US16830884

申请日：2020-03-26

Applicant: TDK CORPORATION

Inventor： Yusuke Oba ,  Raitarou Masaoka ,  Shohei Fujii ,  Maiko Shirokawa

IPC: C04B35/495 ,  H01G4/12 ,  H01G4/10

Abstract: A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC2O5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and a full width at half maximum of a diffraction peak of a (110) plane of the complex oxide is 0.40° or more in an X-ray diffraction chart of the dielectric film.

公开(公告)号：US11776947B2

公开(公告)日：2023-10-03

申请号：US17206656

申请日：2021-03-19

Applicant: TDK CORPORATION

Inventor： Yusuke Oba ,  Kenichi Yoshida ,  Takashi Ohtsuka ,  Yuichiro Okuyama ,  Tomoya Hanai ,  Yu Fukae

IPC: H01L25/18 ,  H01L27/01 ,  H01L21/70 ,  H01L21/78 ,  H01L49/02

CPC classification number: H01L25/18 ,  H01L21/707 ,  H01L21/78 ,  H01L27/016 ,  H01L28/10 ,  H01L28/40

Abstract: Disclosed herein is an electronic component that includes a substrate, a functional layer formed on the substrate and having a plurality of alternately stacked conductor layers and insulating layers, and a plurality of terminal electrodes provided on an uppermost one of the insulating layers. The uppermost one of the insulating layers has a substantially rectangular planar shape and has a protruding part protruding in a planar direction from at least one side in a plan view.

公开(公告)号：US11257620B2

公开(公告)日：2022-02-22

申请号：US16829137

申请日：2020-03-25

Applicant: TDK CORPORATION

Inventor： Maiko Shirokawa ,  Raitarou Masaoka ,  Shohei Fujii ,  Yusuke Oba

IPC: C04B35/495 ,  H01G4/12 ,  H01G4/10

Abstract: A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC2O5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and in an X-ray diffraction chart of the dielectric film, a diffraction peak intensity of a (211) plane of the complex oxide or a diffraction peak intensity of a (222) plane of the complex oxide is larger than a diffraction peak intensity of a (110) plane of the complex oxide.