公开(公告)号：US3911559A

公开(公告)日：1975-10-14

申请号：US42363173

申请日：1973-12-10

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E ,  AKRIDGE ALBERT NEAL

IPC: H01L21/00 ,  H01L21/74 ,  H01L21/762 ,  H01L21/764 ,  H01L29/00 ,  H01L29/04 ,  H01L21/304 ,  H01L21/306 ,  H01L21/36

CPC classification number: H01L29/045 ,  H01L21/00 ,  H01L21/743 ,  H01L21/76264 ,  H01L21/76289 ,  H01L21/764 ,  H01L29/00 ,  Y10S148/028 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/115 ,  Y10S148/122 ,  Y10S438/928 ,  Y10S438/977

Abstract: The disclosure relates to a method in bipolar technology of providing a back contact to the collector of a semiconductor device through a dielectrically isolated circuit to reduce saturation resistance and to provide a continuous region of single crystal semiconductor material extending through the entire slice to provide scribe lines extending entirely through the single crystal material to provide much higher scribing yields. The above is provided by depositing an oxide layer over a single crystal substrate and selectively removing portions of the oxide which will later be either scribe points or be positioned beneath the collector of the transistor to be formed. Semiconductor material is then deposited over the oxide layer, this material depositing on the oxide layer and also on the silicon substrate in the region where the oxide has been removed. A buildup will be provided which is polycrystalline over the oxide layer and single crystal over the region wherein the deposited silicon is directly in contact with the silicon substrate. The silicon substrate is then ground and polished back and an epitaxial layer is then deposited thereon. In the case of the scribe lines, an oxide coating is then placed over the topmost semiconductor layer and portions of the oxide are removed over the scribe lines. An orientation dependent etch is then provided through the semiconductor material bound to the scribe lines. Normal scribing techniques could also be used to provide a relatively high yield as compared with the prior art along the scribe lines.

Abstract translation: 本公开涉及一种双极技术中的方法，其通过介电隔离电路向半导体器件的集电极提供背接触以降低饱和电阻并提供延伸穿过整个切片的单晶半导体材料的连续区域，以提供划线 完全延伸通过单晶材料，以提供更高的划线产量。 通过在单晶衬底上沉积氧化物层并选择性地去除氧化物的部分，这将随后被刻划或者被放置在待形成的晶体管的集电极之下来提供上述。 然后将半导体材料沉积在氧化物层上，该材料沉积在氧化物层上，并且在氧化物被去除的区域中沉积在硅衬底上。 将提供在氧化物层和在其上沉积的硅直接与硅衬底接触的区域上的单晶多晶的堆积。 然后将硅衬底研磨并抛光，然后在其上沉积外延层。 在划线的情况下，然后将氧化物涂层放置在最上面的半导体层上，并且氧化物的部分在划线上被去除。 然后通过结合到划线的半导体材料提供取向相关的蚀刻。 与沿着划线的现有技术相比，正常划线技术也可以用于提供相对高的产量。