公开(公告)号：US3632438A

公开(公告)日：1972-01-04

申请号：US3632438D

申请日：1967-09-29

Applicant: TEXAS INSTRUMENTS INC

Inventor： CARLSON HAROLD G ,  FULLER CLYDE R ,  BROWN GEORGE A

IPC: H01L23/29 ,  H01L29/00 ,  C23C13/04

CPC classification number: H01L23/29 ,  H01L29/00 ,  H01L2224/48463 ,  H01L2224/4918 ,  H01L2924/1305 ,  H01L2924/13091 ,  Y10S148/017 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/053 ,  Y10S148/06 ,  Y10S148/118 ,  Y10S148/122 ,  H01L2924/00

Abstract: Disclosed is a method of forming an insulating layer having an unusually low concentration of contaminating impurities such as sodium, copper, and iron on the surface of a semiconductor substrate during device fabrication. After the insulating layer has been grown or deposited on the surface of the substrate, a thin surface portion of the layer is removed by etching to a depth sufficient to remove a major portion of the impurities present in the layer. In one embodiment a glass film is formed on the surface of the layer by a reaction between an impurity modifier and the layer during processing of the device, to cause the impurities to concentrate in the glass film, and the glass film is removed, removing a major portion of the impurity contamination present in the layer. As a precaution against further contamination, a layer of barrier material is formed on the insulating layer.

Abstract translation: 公开了在器件制造期间在半导体衬底的表面上形成具有异常低浓度的污染杂质如钠，铜和铁的绝缘层的方法。 在绝缘层已经生长或沉积在衬底的表面上之后，通过蚀刻去除该层的薄表面部分到足以去除存在于该层中的大部分杂质的深度。 在一个实施方案中，通过在器件加工期间杂质改性剂与该层之间的反应在该层的表面上形成玻璃膜，以使杂质浓缩在玻璃膜中，并除去玻璃膜 杂质污染物的主要部分存在于该层中。 作为防止进一步污染的预防措施，在绝缘层上形成阻挡材料层。

公开(公告)号：US3574010A

公开(公告)日：1971-04-06

申请号：US3574010D

申请日：1968-12-30

Applicant: TEXAS INSTRUMENTS INC

Inventor： BROWN GEORGE A

IPC: H01L29/78 ,  H01L21/3065 ,  H01L21/336 ,  H01L23/29 ,  H01L29/00 ,  H01L7/34 ,  H01L7/36

CPC classification number: H01L23/29 ,  H01L21/3065 ,  H01L29/00 ,  H01L29/66621 ,  H01L2924/0002 ,  Y10S148/03 ,  Y10S148/141 ,  H01L2924/00

Abstract: A PROCESS OF FABRICATING A MISFET IN WHICH A PAIR OF SPACED APART DOPED SILICON DIOXIDE BODIES IS FORMED ON THE SURFACE OF A SILICON SUBSTRATE. A LAYER OF SILCON NITRIDE IS FORMED OVER THE SURFACE OF THE BODIES AND THE SUBSTRATE AND THE PORTION OF THE LAYERS IN THE SPACE BETWEEN THE BLOCKS IS REMOVED. A THIN LAYER OF THE SILCON SUBSTRATE IS THEN REMOVED FROM THE SPACE BETWEEN THESE BODIES AND A RELATIVELY THIN SILICON DIOXIDE LAYER IS FORMED ON THE SILICON SUBSTRATE IN THIS SPACE. A SECOND LAYER OF SILICON NITRIDE IS THEN FORMED OVER THE FIRST SILICON NITRIDE LAYER AND THE SILICON DIOXIDE LAYER THEREBY TO FORM A DIELECTRIC REGION FOR THE GATE OF THE TRANSISTOR. THEREAFTER SOURCE AND DRAIN REGIONS ARE FORMED BY DIFFUSING IMPURTIES FROM THE DOPED SILICON BLOCKS INTO UNDERLYING PORTIONS OF THE SILICON SUBSTRATE THEREBY FORMING SOURCE AND DRAIN REGIONS, THE SILICON NITRIDE LAYERS PREVENTING OUT-DIFFUSION OF THE DOPANT FROM THE DOPED BODIES AND THE SECOND SILICON NITRIDE LAYER COVERING ANY GAPS BETWEEN THE SILICON DIOXIDE LAYER IN THE GATE REGION BETWEEN THE SILCON DIOXIDE LAYER AND THE FIRST SILICON LAYER.