-
公开(公告)号：US3588777A
公开(公告)日：1971-06-28
申请号：US3588777D
申请日：1968-07-15
Applicant: TEXAS INSTRUMENTS INC
Inventor： SCHROEN WALTER H
CPC classification number: G11C11/44 , Y10S505/866
Abstract: APPARATUS AND THE METHOD OF INTERCONNECTING SUPERCONDUCTING TUNNELING BARRIERS FORMED ON AN INSULATING SUBSTRATE BY PHOTOGRAPHIC TECHNIQUES. METAL STRIPS DEPOSITED ON THE INSULATING SUBSTRATE SERVE AS THE TWO SUPERCONDUCTORS OF A SANDWICH CONFIGURATION SEPARATED BY AN INSULATING TUNNELING BARRIER. TO FORM A TYPICAL BARRIER ARRAY, THE FIRST SUPERCONDUCTORS ARE DEPOSITED AND COVERED WITH A PHOTOERSIST. A WINDOW IS OPENED IN THE PHOTORESIST AT EACH OF THE FIRST CONDUCTORS FOR FABRICATION OF THE BARRIERS. A BARRIER IS THEN FORMED ON EACH OF THE FIRST SUPERCONDUCTORS IN THE WINDOW AREA BY AN OXIDATION PROCESS TO FORM WHAT IS COMMONLY KNOWN AS A "JOSEPHSON BARRIER." THE SECOND SUPERCONDUCTOR FOR EACH BARRIER OF THE ARRAY IS THEN DEPOSITED ON TOP OF THE PHOTORESIST MATERIAL. APPROPRIATE TALILORING OF THE PHOTORESIST MATERIAL FORMS "WAVEGUIDES" THAT INTERCONNECT THE BARRIERS INTO GROUPS. RADIATION FROM ONE BARRIER OF A GROUP TRAVELS THROUGH THE WAVEGUIDE PHORORESIST TO AFFECT THE VOLTAGE AND CURRENT PROFILE OF AN INTERCONNECTED BARRIER.
-
公开(公告)号：US3500137A
公开(公告)日：1970-03-10
申请号：US3500137D
申请日：1967-12-22
Applicant: TEXAS INSTRUMENTS INC
Inventor： SCHROEN WALTER H , PIERCE JOE T
CPC classification number: H01L39/146 , G11C11/44 , H01L21/00 , H01L29/00 , Y10S505/875
-
公开(公告)号：US3673071A
公开(公告)日：1972-06-27
申请号：US3673071D
申请日：1968-08-08
Applicant: TEXAS INSTRUMENTS INC
Inventor： PRITCHARD JOHN P JR , SCHROEN WALTER H
CPC classification number: H01L39/2493 , C23C8/36 , C23C14/024 , C23C14/22 , Y10S505/817 , Y10S505/819
Abstract: Tunneling barriers, in particular superconductive tunneling barriers (Josephson barriers), are prepared in a vacuum chamber maintained at a low atmospheric pressure using an oxygen glow discharge which produces stable and reproducible superconductive tunneling devices. To prepare a Pb-Pbx Oy-Pb barrier the first lead film is placed in a vacuum chamber and charged to a negative potential with regard to the positive ions by fast electrons from the plasma charge. Oxygen gas molecules bombard the first lead film where they probably disassociate into two oxygen atoms. A surface reaction takes place which produces a lead-oxide insulating layer in the first lead film. After this lead-oxide layer has reached a predetermined thickness, the plasma is extinguished and the oxygen-lead reaction stops. Immediately after the oxide formation, a second lead layer is evaporated onto the oxide layer to form a tunneling barrier of the Josephson type. Instead of forming a lead-oxide insulating layer into the first lead film, polymerized organic molecules may be formed on the lead surface by the high energy bombardment.
Abstract translation: 隧穿屏障，特别是超导隧道势垒（约瑟夫森屏障）在使用氧气辉光放电的低气压保持在真空室内制备，产生稳定和可再现的超导隧道装置。 为了制备Pb-Pbx Oy-Pb势垒，将第一引线膜放置在真空室中，并通过来自等离子体电荷的快速电子将正电荷充电至负电位。 氧气分子轰击第一个铅膜，在那里它们可能解离成两个氧原子。 发生在第一引线膜中产生氧化铅绝缘层的表面反应。 在该氧化铅层达到预定厚度之后，等离子体熄灭，氧 - 铅反应停止。 在氧化物形成之后，第二引线层在氧化层上蒸发形成约瑟夫森型隧道势垒。 代替将铅氧化物绝缘层形成到第一引线膜中，可以通过高能量轰击在引线表面上形成聚合的有机分子。
-
公开(公告)号：US3512017A
公开(公告)日：1970-05-12
申请号：US3512017D
申请日：1967-12-22
Applicant: TEXAS INSTRUMENTS INC
Inventor： PIERCE JOE T , SCHROEN WALTER H
-
-
-
Search Results
4
records
(took 0.01 seconds)
