公开(公告)号：US20240145419A1

公开(公告)日：2024-05-02

申请号：US17977610

申请日：2022-10-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Daiki KOMATSU ,  Kashyap MOHAN

IPC: H01L23/00 ,  H01L21/56 ,  H01L21/67 ,  H01L23/31

CPC classification number: H01L24/16 ,  H01L21/563 ,  H01L21/67144 ,  H01L23/3121 ,  H01L24/13 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/13147 ,  H01L2224/16258 ,  H01L2224/75262 ,  H01L2224/81224 ,  H01L2224/81447 ,  H01L2224/8183

Abstract: An example method includes placing a semiconductor die on a bonding surface of metal substrate. The die includes metal pillars extending from a surface of the die aligned with respective bonding locations on the bonding surface of the substrate. The pillars and the substrate can be formed of a common type of metal. The method also includes controlling a laser to emit laser light to heat the substrate at respective bonding locations to bond the metal pillars with the substrate at the respective bonding locations.