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公开(公告)号：US12132465B2
公开(公告)日：2024-10-29
申请号：US17537776
申请日：2021-11-30
发明人： Jeronimo Segovia-Fernandez , Bichoy Bahr , Ting-Ta Yen , Michael Henderson Perrott , Zachary Schaffer
CPC分类号： H03H9/175 , H03H9/02015 , H03H9/131
摘要： A tunable bulk acoustic wave (BAW) resonator includes: a first electrode adapted to be coupled to an oscillator circuit; a second electrode adapted to be coupled to the oscillator circuit; and a piezoelectric layer between the first electrode and the second electrode; and a Bragg mirror. The Bragg mirror has: a metal layer; and a dielectric layer between the metal layer and either of the first electrode or the second electrode. The tunable BAW resonator also includes: a radio-frequency (RF) signal source having a first end and a second end, the first end coupled to the first electrode, and the second end coupled to the second electrode; and an amplifier circuit between either the first electrode or the second electrode and the Bragg mirror metal layer.
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公开(公告)号：US12054385B2
公开(公告)日：2024-08-06
申请号：US17388301
申请日：2021-07-29
IPC分类号： B81B7/00
CPC分类号： B81B7/0048 , B81B2201/0271 , B81B2203/033
摘要： A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.
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公开(公告)号：US20230115689A1
公开(公告)日：2023-04-13
申请号：US17488891
申请日：2021-09-29
摘要： A piezoelectric resonator includes a first conductive layer, and a piezoelectric layer affixed to a first side of the first conductive layer. The piezoelectric resonator also includes a stair step frame structure affixed to a first side of the piezoelectric layer, and a second conductive layer, affixed to the first side of the piezoelectric layer and covering the stair step frame structure.
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