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    Using Acoustic Reflector to Reduce Spurious Modes
    2.
    发明申请
    Using Acoustic Reflector to Reduce Spurious Modes 审中-公开

    公开(公告)号：US20200373908A1

    公开(公告)日：2020-11-26

    申请号：US16422494

    申请日：2019-05-24

    Applicant: Texas Instruments Incorporated

    Inventor： Ting-Ta Yen ,  Jeronimo Segovia Fernandez ,  Bichoy Bahr ,  Peter Smeys

    IPC: H03H9/17 ,  H03H9/13 ,  H03H9/05 ,  H03H9/10

    Abstract: A micromechanical system (MEMS) resonator includes a base substrate. A piezoelectric layer has a first electrode attached to a first surface of the piezoelectric layer and a second electrode attached to a second surface of the piezoelectric layer opposite the first electrode. The first electrode is bounded by a perimeter edge. A patterned acoustic mirror is formed on a top surface of the first electrode opposite the piezoelectric layer, such that the patterned acoustic mirror covers a border strip of the top surface of the first electrode at the perimeter edge and does not cover an active portion of the top surface of the first electrode.

    PULLABLE CLOCK OSCILLATOR
    5.
    发明申请
    PULLABLE CLOCK OSCILLATOR 审中-公开

    公开(公告)号：US20200274485A1

    公开(公告)日：2020-08-27

    申请号：US16870582

    申请日：2020-05-08

    Applicant: Texas Instruments Incorporated

    Inventor： Ben-yong Zhang ,  Seong-Ryong Ryu ,  Ali Kiaei ,  Ting-Ta Yen ,  Kai Yiu Tam

    IPC: H03B1/04 ,  H03B5/32 ,  H03B1/02 ,  H03L7/099 ,  H03B5/36

    Abstract: A clock oscillator includes with a pullable BAW oscillator to generate an output signal with a target frequency. The BAW oscillator is based on a BAW resonator and voltage-controlled variable load capacitance, responsive to a capacitance control signal to provide a selectable load capacitance. An oscillator driver (such as a differential negative gm transconductance amplifier), is coupled to the BAW oscillator to provide an oscillation drive signal. The BAW oscillator is responsive to the oscillation drive signal to generate the output signal with a frequency based on the selectable load capacitance. The oscillator driver can include a bandpass filter network with a resonance frequency substantially at the target frequency.

    BULK ACOUSTIC WAVE RESONATORS HAVING A PHONONIC CRYSTAL ACOUSTIC MIRROR
    6.
    发明申请
    BULK ACOUSTIC WAVE RESONATORS HAVING A PHONONIC CRYSTAL ACOUSTIC MIRROR 审中-公开

    公开(公告)号：US20190036512A1

    公开(公告)日：2019-01-31

    申请号：US15660550

    申请日：2017-07-26

    Applicant: Texas Instruments Incorporated

    Inventor： Ting-Ta Yen ,  Bichoy Bahr

    IPC: H03H9/17

    Abstract: Bulk acoustic wave resonators having a phononic crystal acoustic mirror are disclosed. An example integrated circuit package includes a bulk acoustic wave (BAW) resonator including a phononic crystal acoustic mirror (PCAM), the PCAM including a first arrangement of a first plurality of members in a first region, and a second arrangement of a second plurality of members in a second region, the first arrangement different from the second arrangement.

    PACKAGE FOR STRESS SENSITIVE COMPONENT AND SEMICONDUCTOR DEVICE
    9.
    发明申请
    PACKAGE FOR STRESS SENSITIVE COMPONENT AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230005881A1

    公开(公告)日：2023-01-05

    申请号：US17364769

    申请日：2021-06-30

    Applicant: Texas Instruments Incorporated

    Inventor： Anindya Poddar ,  Mahmud Chowdhury ,  Hau Nguyen ,  Masamitsu Matsuura ,  Ting-Ta Yen

    IPC: H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L25/065

    Abstract: In a described example, an apparatus includes: a first semiconductor die with a component on a first surface; a second semiconductor die mounted on a package substrate and having a third surface facing away from the package substrate; a solder seal bonded to and extending from the first surface of the first semiconductor die flip chip mounted to the third surface of the second semiconductor die, the solder seal at least partially surrounding the stress sensitive component; a first solder joint formed between the solder seal and the third surface of the second semiconductor die; a second solder joint formed between solder at an end of the post connect and the third surface of the second semiconductor die; and a mold compound covering the second surface of the first semiconductor die, a portion of the second semiconductor die, and an outside periphery of the solder seal.

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