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公开(公告)号:US20220269067A1
公开(公告)日:2022-08-25
申请号:US17398907
申请日:2021-08-10
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: William Craig McDONALD , James Norman HALL , Kelly Jay TAYLOR , Song ZHENG
Abstract: A system includes a hinge structure. The hinge structure includes four support posts and four hinges, each hinge coupled to an edge of a support post and to a plate of the hinge structure, where each hinge includes two 90° turns. The system also includes a mirror coupled to the hinge structure and an electrode structure coupled to the hinge structure.
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公开(公告)号:US20220212919A1
公开(公告)日:2022-07-07
申请号:US17363710
申请日:2021-06-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jennifer Lynne HOLM , Simon Joshua JACOBS , Mary Alyssa Drummond ROBY , Kathryn Anne SCHUCK , Kelly Jay TAYLOR
Abstract: A device includes a first substrate. The device also includes a barrier structure including a metallic layer on the first substrate, where the barrier structure forms a cavity. The device also includes a second substrate on the metallic layer, where the metallic layer extends between the first substrate and the second substrate, and where the metallic layer includes a sloped edge that contacts the first substrate within the cavity.
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公开(公告)号:US20230127477A1
公开(公告)日:2023-04-27
申请号:US17728844
申请日:2022-04-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Christopher Murray BEARD , Song ZHENG , John Wesley HAMLIN, III , Win-Jae Jessie YUAN , Kelly Jay TAYLOR , Jose Antonio MARTINEZ SOTO
IPC: B81C1/00
Abstract: In an example, a method includes depositing an organic polymer layer on one or more material layers. The method also includes thermally curing the organic polymer layer. The method includes depositing a hard mask on the organic polymer layer and depositing a photoresist layer on the hard mask. The method also includes patterning the photoresist layer to expose at least a portion of the hard mask. The method includes etching the exposed portion of the hard mask to expose at least a portion of the organic polymer layer. The method also includes etching the exposed portion of the organic polymer layer to expose at least a portion of the one or more material layers.
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公开(公告)号:US20230077129A1
公开(公告)日:2023-03-09
申请号:US17843816
申请日:2022-06-17
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sean Christopher O'BRIEN , Kelly Jay TAYLOR , John Wesley HAMLIN, III , Christopher Murray BEARD
Abstract: In an example, a method of manufacturing a MEMS device includes forming a via. The method also includes depositing metal in the via and depositing a first layer of a non-photoactive organic polymer on the metal. The method includes baking the first layer of the non-photoactive organic polymer. The method also includes depositing a second layer of the non-photoactive organic polymer on the first layer of the non-photoactive organic polymer after baking the first layer of the non-photoactive organic polymer. The method includes baking the second layer of the non-photoactive organic polymer. The method also includes etching the first layer and the second layer of the non-photoactive organic polymer.
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公开(公告)号:US20180186625A1
公开(公告)日:2018-07-05
申请号:US15395029
申请日:2016-12-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Simon Joshua JACOBS , Molly Nelis SING , Kelly Jay TAYLOR
CPC classification number: B81B3/0075 , B81B2207/07 , B81C1/0038 , B81C2201/0132 , B81C2201/0176
Abstract: In described examples, a method of forming a microelectromechanical device comprises: forming a first metallic layer comprising a conducting layer on a substrate; forming a first dielectric layer on the first metallic layer, wherein the first dielectric layer comprises one or more individual dielectric layers; forming a sacrificial layer on the first dielectric layer; forming a second dielectric layer on the sacrificial layer; forming a second metallic layer on the second dielectric layer; and removing the sacrificial layer to form a spacing between the second dielectric layer and the first dielectric layer. Removing the sacrificial layer enables movement of the second dielectric layer relative to the first dielectric layer in at least one direction.
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