公开(公告)号：US20170283255A1

公开(公告)日：2017-10-05

申请号：US15087120

申请日：2016-03-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles EHMKE ,  Simon Joshua JACOBS

IPC: B81C3/00 ,  C25D5/54 ,  C25D3/12 ,  C25D5/12 ,  C25D3/48 ,  C25D3/54

CPC classification number: B23K20/16 ,  B23K20/026 ,  B23K20/233 ,  B23K20/24 ,  B23K35/3033 ,  B23K2101/42 ,  B81C1/00269 ,  B81C2203/019 ,  B81C2203/036 ,  C25D5/10 ,  C25D5/12 ,  C25D5/14 ,  C25D5/50 ,  C25D5/505 ,  C25D7/123

Abstract: In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.

公开(公告)号：US20220212919A1

公开(公告)日：2022-07-07

申请号：US17363710

申请日：2021-06-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jennifer Lynne HOLM ,  Simon Joshua JACOBS ,  Mary Alyssa Drummond ROBY ,  Kathryn Anne SCHUCK ,  Kelly Jay TAYLOR

IPC: B81B7/00 ,  B81C1/00 ,  G02B26/08

Abstract: A device includes a first substrate. The device also includes a barrier structure including a metallic layer on the first substrate, where the barrier structure forms a cavity. The device also includes a second substrate on the metallic layer, where the metallic layer extends between the first substrate and the second substrate, and where the metallic layer includes a sloped edge that contacts the first substrate within the cavity.

公开(公告)号：US20200211995A1

公开(公告)日：2020-07-02

申请号：US16729018

申请日：2019-12-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Simon Joshua JACOBS

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  B23K1/005

Abstract: A semiconductor device includes a solder supporting material above a substrate. The semiconductor device also includes a solder on the solder supporting material. The semiconductor device further includes selective laser annealed or laser ablated portions of the solder and underlying solder supporting material to form a semiconductor device having 3D features.

公开(公告)号：US20190074233A1

公开(公告)日：2019-03-07

申请号：US15697505

申请日：2017-09-07

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Adam Joseph FRUEHLING ,  Juan Alejandro HERBSOMMER ,  Simon Joshua JACOBS ,  Benjamin Stassen COOK

IPC: H01L23/08 ,  B81C1/00 ,  H01L21/768

CPC classification number: H01L23/08 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00333 ,  B81C2203/0136 ,  B81C2203/0145 ,  G04F5/14 ,  H01L21/76898

Abstract: A method for forming a sealed cavity includes bonding a non-conductive structure to a first substrate to form a non-conductive aperture into the first substrate. On a surface of the non-conductive structure opposite the first substrate, the method includes depositing a first metal layer. The method further includes patterning a first iris in the first metal layer, depositing a first dielectric layer on a surface of the first metal layer opposite the non-conductive structure, and patterning an antenna on a surface of the first dielectric layer opposite the first metal layer. The method also includes creating a cavity in the first substrate, depositing a second metal layer on a surface of the cavity, patterning a second iris in the second metal layer, and bonding a second substrate to a surface of the first substrate opposite the non-conductive structure to thereby seal the cavity.

公开(公告)号：US20200207611A1

公开(公告)日：2020-07-02

申请号：US16813967

申请日：2020-03-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Adam Joseph FRUEHLING ,  Juan Alejandro HERBSOMMER ,  Simon Joshua JACOBS ,  Benjamin Stassen Cook ,  James F. HALLAS ,  Randy LONG

IPC: B81B7/00 ,  H03L7/26 ,  G01L7/08 ,  G04F5/14 ,  G01M3/32 ,  G01L9/00

Abstract: An electronic device includes a package substrate, a circuit assembly, and a housing. The circuit assembly is mounted on the package substrate. The circuit assembly includes a first sealed cavity formed in a device substrate. The housing is mounted on the package substrate to form a second sealed cavity about the circuit assembly.

公开(公告)号：US20190127212A1

公开(公告)日：2019-05-02

申请号：US15799808

申请日：2017-10-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Simon Joshua JACOBS ,  Molly Nelis SING ,  Lawrence Tucker LATHAM

IPC: B81B3/00 ,  B81C1/00

Abstract: In described examples, a MEMS device component includes a passivation layer formed from a vapor and/or a liquid compound that may include precursors. The compound may contain amino acid, antioxidants, nitriles or other compounds, and may be disposed on a surface of the MEMS device component and/or a package or package portion thereof. If the compound is a precursor, it may be treated to cause formation of the passivation layer from the precursor.

公开(公告)号：US20160060108A1

公开(公告)日：2016-03-03

申请号：US14844779

申请日：2015-09-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： William Robert MORRISON ,  Mark Christopher FISHER ,  Murali Hanabe ,  Ganapathy Subramaniam SIVAKUMAR ,  Simon Joshua JACOBS

IPC: B81C1/00

CPC classification number: B81C1/00984 ,  B81B3/0005 ,  B81B7/0032 ,  B81C1/00261 ,  B81C1/0096 ,  B81C2201/112 ,  H01L21/02112 ,  H04W4/02 ,  Y10S257/914

Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.

Abstract translation: 器件具有微机电系统（MEMS）部件，其中至少一个表面和涂层设置在表面的至少一部分上。 该涂层具有式M（CnF2n + 10r）的化合物，其中M是极性头基，其中n≥2r。 n的值可以在2至约20的范围内，并且r的值可以在1至约10的范围内.n加r的值可以在3至约30的范围内，并且n：r的比可以具有值 为约2：1至约20：1。

公开(公告)号：US20140329392A1

公开(公告)日：2014-11-06

申请号：US14333829

申请日：2014-07-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： William Robert MORRISON ,  Mark Christopher FISHER ,  Murali HANABE ,  Ganapathy Subramaniam SIVAKUMAR ,  Simon Joshua JACOBS

IPC: B81C1/00 ,  H01L21/02

CPC classification number: B81C1/00984 ,  B81B3/0005 ,  B81B7/0032 ,  B81C1/00261 ,  B81C1/0096 ,  B81C2201/112 ,  H01L21/02112 ,  H04W4/02 ,  Y10S257/914

Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n≧2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.

Abstract translation: 器件具有微机电系统（MEMS）部件，其中至少一个表面和涂层设置在表面的至少一部分上。 该涂层具有式M（C n F 2n + 10）的化合物，其中M是极性头基，其中n≥2r。 n的值可以在2至约20的范围内，并且r的值可以在1至约10的范围内.n加r的值可以在3至约30的范围内，并且n：r的比可以具有值 为约2：1至约20：1。

公开(公告)号：US20230243041A1

公开(公告)日：2023-08-03

申请号：US17587614

申请日：2022-01-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Simon Joshua JACOBS

IPC: C23F1/34 ,  H01L21/02

CPC classification number: C23F1/34 ,  H01L21/02019

Abstract: An etching composition includes phosphate ions, pyrophosphate ions, polyphosphate ions, or a combination thereof and an oxidant. The etching composition has a neutral or basic pH.

公开(公告)号：US20220177781A1

公开(公告)日：2022-06-09

申请号：US17339474

申请日：2021-06-04

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Simon Joshua JACOBS

IPC: C09K13/02 ,  C09K13/00 ,  H01L21/306 ,  H01L21/308

Abstract: An alkaline etching solution comprising a hydroxide salt (e.g., an alkali metal hydroxide, an ammonium hydroxide, or a combination thereof), a polyol having at least three hydroxyl (—OH) groups, and water. Also provided is a method of producing a semiconductor device by obtaining a semiconductor substrate having masked and unmasked surfaces; exposing the semiconductor substrate having the masked and unmasked surfaces to an alkaline etching solution, such that the unmasked surfaces of the substrate are anisotropically etched, wherein the alkaline etching solution comprises: a hydroxide salt; a polyol having at least three hydroxyl (—OH) groups; and water; and performing additional processing to produce the semiconductor device.