HEAT-DISSIPATING WIREBONDED MEMBERS ON PACKAGE SURFACES

    公开(公告)号:US20220352055A1

    公开(公告)日:2022-11-03

    申请号:US17246056

    申请日:2021-04-30

    Abstract: In some examples, a semiconductor package includes a semiconductor die having a device side and a non-device side opposing the device side. The device side has a circuit formed therein. The package includes a first conductive member having a first surface coupled to the non-device side of the semiconductor die and a second surface opposing the first surface. The second surface is exposed to a top surface of the semiconductor package. The package includes a second conductive member exposed to an exterior of the semiconductor package and coupled to the device side of the semiconductor die. The package includes a plurality of wirebonded members coupled to the second surface of the first conductive member and exposed to the exterior of the semiconductor package. At least one of the wirebonded members in the plurality of wirebonded members has a gauge of at least 5 mils.

    MOLD COMPOUND TRENCHES TO FACILITATE PACKAGE SINGULATION

    公开(公告)号:US20250079247A1

    公开(公告)日:2025-03-06

    申请号:US18459119

    申请日:2023-08-31

    Abstract: In examples, a semiconductor package comprises a semiconductor die having a device side in which circuitry is formed, and a conductive terminal coupled to the device side of the semiconductor die. The package also comprises a mold compound covering the semiconductor die and at least part of the conductive terminal, where the conductive terminal is exposed to an exterior of the mold compound. The mold compound has top and bottom surfaces and a lateral side extending between the top and bottom surfaces. The lateral side includes a first surface contacting the top surface and extending vertically from the top surface toward the bottom surface. The lateral side also includes a second surface contacting the first surface and extending horizontally away from the semiconductor die. The lateral side also includes a third surface contacting the second surface and extending from the second surface to contact the bottom surface. The third surface has physical marks resulting from a singulation process. The first and second surfaces lack physical marks resulting from the singulation process.

    HEAT-DISSIPATING WIREBONDED MEMBERS ON PACKAGE SURFACES

    公开(公告)号:US20240379509A1

    公开(公告)日:2024-11-14

    申请号:US18781062

    申请日:2024-07-23

    Abstract: In some examples, a semiconductor package includes a semiconductor die having a device side and a non-device side opposing the device side. The device side has a circuit formed therein. The package includes a first conductive member having a first surface coupled to the non-device side of the semiconductor die and a second surface opposing the first surface. The second surface is exposed to a top surface of the semiconductor package. The package includes a second conductive member exposed to an exterior of the semiconductor package and coupled to the device side of the semiconductor die. The package includes a plurality of wirebonded members coupled to the second surface of the first conductive member and exposed to the exterior of the semiconductor package. At least one of the wirebonded members in the plurality of wirebonded members has a gauge of at least 5 mils.

    LEADED WAFER CHIP SCALE PACKAGES
    7.
    发明申请

    公开(公告)号:US20230095630A1

    公开(公告)日:2023-03-30

    申请号:US17491394

    申请日:2021-09-30

    Abstract: In examples, a wafer chip scale package (WCSP) comprises a semiconductor die including a device side having circuitry formed therein. The WCSP includes a redistribution layer (RDL) including an insulation layer abutting the device side and a metal trace coupled to the device side and abutting the insulation layer. The WCSP includes a conductive member coupled to the metal trace, the conductive member in a first vertical plane that is positioned no farther than a quarter of a horizontal width of the semiconductor die from a vertical axis extending through a center of the semiconductor die. The WCSP includes a lead coupled to the conductive member and extending horizontally past a second vertical plane defined by a perimeter of the semiconductor die.

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