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公开(公告)号:US12002846B2
公开(公告)日:2024-06-04
申请号:US17500096
申请日:2021-10-13
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Poornika Fernandes , David Matthew Curran , Stephen Arlon Meisner , Bhaskar Srinivasan , Guruvayurappan S. Mathur , Scott William Jessen , Shih Chang Chang , Russell Duane Fields , Thomas Terrance Lynch
CPC classification number: H01L28/60 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02274
Abstract: In some examples, an integrated circuit comprises a substrate; a first metal layer and a second metal layer positioned above the substrate; a first composite dielectric layer located on the first metal layer, wherein the first composite dielectric layer comprises a first anti-reflective coating; a second composite dielectric layer positioned on the second metal layer, wherein the second composite dielectric layer comprises a second anti-reflective coating; and a capacitor metal layer disposed over the first composite dielectric layer.
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公开(公告)号:US11171200B2
公开(公告)日:2021-11-09
申请号:US16584463
申请日:2019-09-26
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Poornika Fernandes , David Matthew Curran , Stephen Arion Meisner , Bhaskar Srinivasan , Guruvayurappan S. Mathur , Scott William Jessen , Shih Chang Chang , Russell Duane Fields , Thomas Terrance Lynch
Abstract: In some examples, an integrated circuit comprises a substrate; a first metal layer and a second metal layer positioned above the substrate; a first composite dielectric layer located on the first metal layer, wherein the first composite dielectric layer comprises a first anti-reflective coating; a second composite dielectric layer positioned on the second metal layer, wherein the second composite dielectric layer comprises a second anti-reflective coating; and a capacitor metal layer disposed over the first composite dielectric layer.
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