公开(公告)号：US20240213178A1

公开(公告)日：2024-06-27

申请号：US18595905

申请日：2024-03-05

Applicant: Texas Instruments Incorporated

Inventor： Tomoko NOGUCHI ,  Mutsumi MASUMOTO ,  Kengo AOYA ,  Masamitsu MATSUURA

IPC: H01L23/552 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L24/48 ,  H01L2224/48245

Abstract: A semiconductor device includes a semiconductor die having a top side surface comprising a semiconductor material including circuitry therein having bond pads connected to nodes in the circuitry, a bottom side surface, and sidewall surfaces between the top side surface and the bottom side surface. A metal coating layer including a bottom side metal layer is over the bottom side surface that extends continuously to a sidewall metal layer on the sidewall surfaces. The sidewall metal layer defines a sidewall plane that is at an angle from 10° to 60° relative to a normal projected from a bottom plane defined by the bottom side metal layer.

公开(公告)号：US20220068556A1

公开(公告)日：2022-03-03

申请号：US17002283

申请日：2020-08-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yi YAN ,  Kengo AOYA ,  Tomoko NOGUCHI ,  Tatsuhiro SHIMIZU

IPC: H01F27/32 ,  H01F41/14 ,  H01F27/29 ,  H01F1/04

Abstract: In examples, a transformer device comprises a first magnetic member; a second magnetic member; and a substrate layer between the first and second magnetic members. The substrate layer comprises a transformer coil. The transformer device includes a third magnetic member inside the substrate layer. The transformer coil encircles the third magnetic member. The third magnetic member physically separates from the first and second magnetic members.

公开(公告)号：US20220208689A1

公开(公告)日：2022-06-30

申请号：US17139417

申请日：2020-12-31

Applicant: Texas Instruments Incorporated

Inventor： Tomoko NOGUCHI ,  Mutsumi MASUMOTO ,  Kengo AOYA ,  Masamitsu MATSUURA

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L21/78 ,  H01L21/56 ,  H01L21/683

Abstract: A semiconductor device includes a semiconductor die having a top side surface comprising a semiconductor material including circuitry therein having bond pads connected to nodes in the circuitry, a bottom side surface, and sidewall surfaces between the top side surface and the bottom side surface. A metal coating layer including a bottom side metal layer is over the bottom side surface that extends continuously to a sidewall metal layer on the sidewall surfaces. The sidewall metal layer defines a sidewall plane that is at an angle from 10° to 60° relative to a normal projected from a bottom plane defined by the bottom side metal layer.