公开(公告)号：US10790275B2

公开(公告)日：2020-09-29

申请号：US16198506

申请日：2018-11-21

Applicant: Texas Instruments Incorporated

Inventor： Zaichen Chen ,  Akram A. Salman ,  Binghua Hu

IPC: H01L29/00 ,  H01L27/02 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L21/265 ,  H01L29/06 ,  H01L29/732 ,  H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  H01L21/321

Abstract: An electronic device includes a substrate having a second conductivity type including a semiconductor surface layer with a buried layer (BL) having a first conductivity type. In the semiconductor surface layer is a first doped region (e.g., collector) and a second doped region (e.g., emitter) both having the first conductivity type, with a third doped region (e.g., a base) having the second conductivity type within the second doped region, wherein the first doped region extends below and lateral to the third doped region. At least one row of deep trench (DT) isolation islands are within the first doped region each including a dielectric liner extending along a trench sidewall from the semiconductor surface layer to the BL with an associated deep doped region extending from the semiconductor surface layer to the BL. The deep doped regions can merge forming a merged deep doped region that spans the DT islands.

公开(公告)号：US20240332284A1

公开(公告)日：2024-10-03

申请号：US18741857

申请日：2024-06-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James Paul DiSarro ,  Aravind Chennimalai Appaswamy ,  Zaichen Chen

IPC: H01L27/02 ,  H01L29/739 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H01L29/7393 ,  H02H9/046

Abstract: An electrostatic discharge protection system with a node adapted to receive a signal and threshold detecting circuitry coupled to the node. The system includes an IGBT having an IGBT gate coupled to an output of the threshold detecting circuitry, a resistor coupled between an IGBT emitter of the IGBT and a low reference potential node, and a BJT having a BJT base coupled to the IGBT emitter.

公开(公告)号：US11658176B2

公开(公告)日：2023-05-23

申请号：US17035662

申请日：2020-09-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Zaichen Chen ,  Akram A. Salman ,  Binghua Hu

IPC: H01L29/00 ,  H01L27/02 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L21/265 ,  H01L29/06 ,  H01L29/732 ,  H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  H01L21/321

CPC classification number: H01L27/0259 ,  H01L21/26513 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66234 ,  H01L29/732 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/3212 ,  H01L21/76877

Abstract: An electronic device includes a substrate having a second conductivity type including a semiconductor surface layer with a buried layer (BL) having a first conductivity type. In the semiconductor surface layer is a first doped region (e.g., collector) and a second doped region (e.g., emitter) both having the first conductivity type, with a third doped region (e.g., a base) having the second conductivity type within the second doped region, wherein the first doped region extends below and lateral to the third doped region. At least one row of deep trench (DT) isolation islands are within the first doped region each including a dielectric liner extending along a trench sidewall from the semiconductor surface layer to the BL with an associated deep doped region extending from the semiconductor surface layer to the BL. The deep doped regions can merge forming a merged deep doped region that spans the DT islands.

公开(公告)号：US12040322B2

公开(公告)日：2024-07-16

申请号：US17321466

申请日：2021-05-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James Paul DiSarro ,  Aravind Chennimalai Appaswamy ,  Zaichen Chen

IPC: H01L27/02 ,  H01L29/739 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H01L29/7393 ,  H02H9/046

Abstract: An electrostatic discharge protection system with a node adapted to receive a signal and threshold detecting circuitry coupled to the node. The system includes an IGBT having an IGBT gate coupled to an output of the threshold detecting circuitry, a resistor coupled between an IGBT emitter of the IGBT and a low reference potential node, and a BJT having a BJT base coupled to the IGBT emitter.

公开(公告)号：US20220223580A1

公开(公告)日：2022-07-14

申请号：US17321466

申请日：2021-05-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： James Paul DiSarro ,  Aravind Chennimalai Appaswamy ,  Zaichen Chen

IPC: H01L27/02 ,  H01L29/739 ,  H02H9/04

Abstract: An electrostatic discharge protection system with a node adapted to receive a signal and threshold detecting circuitry coupled to the node. The system includes an IGBT having an IGBT gate coupled to an output of the threshold detecting circuitry, a resistor coupled between an IGBT emitter of the IGBT and a low reference potential node, and a BJT having a BJT base coupled to the IGBT emitter.

公开(公告)号：US20210408270A1

公开(公告)日：2021-12-30

申请号：US17357142

申请日：2021-06-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Zaichen Chen ,  Akram Ali Salman

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: An integrated circuit includes a semiconductor substrate having a doped region, e.g. a DWELL, with a first conductivity type. A source region is located within the doped region, the source region having a second opposite conductivity type. A drain region having the second conductivity type is spaced apart from the source region. A gate electrode is located between the source region and the drain region, the gate electrode partially overlapping the doped region. A body region having the first conductivity type is located within the doped region. A dielectric layer forms a closed path around the body region.