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公开(公告)号：US08674461B2
公开(公告)日：2014-03-18
申请号：US13943339
申请日：2013-07-16
IPC分类号： H01L27/14
CPC分类号： H01L29/73 , H01J17/40 , H01L29/0821 , H01L29/1004 , H01L29/49 , H01L29/7311 , H01L29/772 , H01L29/78
摘要： The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.
摘要翻译： 本发明提供了组合半导体和等离子体器件，包括晶体管和光电晶体管。 优选实施例的混合等离子体半导体器件具有活性固态半导体区域和在活性固态半导体区域附近产生的等离子体。 本发明的装置被称为混合等离子体半导体器件，其中等离子体，优选微等离子体与常规固态半导体器件区域配合，以影响或执行诸如由晶体管提供的半导体功能。 本发明提供了具有以前不可用的特性的混合等离子体电子/光子器件系列。 在本发明的晶体管器件中，低温辉光放电是混合晶体管的一部分。 示例性的优选器件包括混合BJT和MOSFET器件。
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2.发明授权Logic function generation from single microplasma transistor devices and arrays of devices 有权单个微等离子体晶体管器件和器件阵列的逻辑功能生成公开(公告)号：US09330877B2
公开(公告)日：2016-05-03
申请号：US14727156
申请日：2015-06-01
发明人： J. Gary Eden , Paul A. Tchertchian , Clark J. Wagner , Dane J. Sievers , Thomas J. Houlahan , Benben Li
CPC分类号： H01J17/36 , H01J17/066 , H01J17/49 , H01J17/497 , H01L29/66234 , H01L29/73 , H01L33/02
摘要： Logic devices are provided in multiple sub-collector and sub-emitter microplasma devices formed in thin and flexible, or inflexible, semiconductor materials. Logic operations are provided with one of a plurality of microplasmas forming sub-collectors with a common emitter, or a common collector plasma with a plurality of sub-emitter regions in a solid state semi-conductor pn-junction, and generating a logic output from an electrode, based upon electrode inputs to two other electrodes.
摘要翻译： 逻辑器件设置在以薄而柔性或不灵活的半导体材料形成的多个子集电极和子发射极微质体器件中。 逻辑运算具有多个微型积分器中的一种，其形成具有公共发射极的子集电极，或者具有在固态半导体pn结中具有多个子发射极区域的公共集电极等离子体，并且产生逻辑输出 电极，基于电极输入到另外两个电极。
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3.发明申请LOGIC FUNCTION GENERATION FROM SINGLE MICROPLASMA TRANSISTOR DEVICES AND ARRAYS OF DEVICES 有权来自单个微晶硅晶体管器件和器件阵列的逻辑功能生成公开(公告)号：US20150294831A1
公开(公告)日：2015-10-15
申请号：US14727156
申请日：2015-06-01
发明人： J. Gary Eden , Paul A. Tchertchian , Clark J. Wagner , Dane J. Sievers , Thomas J. Houlahan , Benben Li
CPC分类号： H01J17/36 , H01J17/066 , H01J17/49 , H01J17/497 , H01L29/66234 , H01L29/73 , H01L33/02
摘要： Logic devices are provided in multiple sub-collector and sub-emitter microplasma devices formed in thin and flexible, or inflexible, semiconductor materials. Logic operations are provided with one of a plurality of microplasmas forming sub-collectors with a common emitter, or a common collector plasma with a plurality of sub-emitter regions in a solid state semi-conductor pn-junction, and generating a logic output from an electrode, based upon electrode inputs to two other electrodes.
摘要翻译： 逻辑器件设置在以薄而柔性或不灵活的半导体材料形成的多个子集电极和子发射极微质体器件中。 逻辑运算具有多个微型积分器中的一种，其形成具有公共发射极的子集电极，或者具有在固态半导体pn结中具有多个子发射极区域的公共集电极等离子体，并且产生逻辑输出 电极，基于电极输入到另外两个电极。
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公开(公告)号：US20140339677A1
公开(公告)日：2014-11-20
申请号：US14452032
申请日：2014-08-05
发明人： J. Gary Eden , Paul A. Tchertchian , Clark J. Wagner , Dane J. Sievers , Thomas J. Houlahan , Benben Li
CPC分类号： H01J17/36 , H01J17/066 , H01J17/49 , H01J17/497 , H01L29/66234 , H01L29/73 , H01L33/02
摘要： A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector. Logic devices are provided in multiple sub collector and sub emitter microplasma devices formed in thin and flexible or not flexible semiconductor materials.
摘要翻译： 复合等离子体半导体器件具有薄且柔性的半导体基底层。 发射极区域扩散到形成pn结的基极层中。 绝缘体层位于基极层和发射极区域的一侧。 基极和发射极通过绝缘体层彼此隔离，并通过绝缘体层与基极层和发射极区域电接触。 薄且柔性的集电极层位于基层的相对侧。 在集电极层中形成微腔并与发射极区对准。 集电极被布置为通过向集电极施加电压来维持微腔内的微量。 将发射极区域的深度和基极层的厚度设定为将基底层的预定薄部分定义为发射极区域和微腔体之间的基极区域。 在微腔中产生的微血管作为收集器。 逻辑器件设置在形成为薄且柔性或不柔性半导体材料的多个子集电极和子发射体微质体器件中。
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公开(公告)号：US20130299909A1
公开(公告)日：2013-11-14
申请号：US13943339
申请日：2013-07-16
IPC分类号： H01L29/73 , H01L29/772
CPC分类号： H01L29/73 , H01J17/40 , H01L29/0821 , H01L29/1004 , H01L29/49 , H01L29/7311 , H01L29/772 , H01L29/78
摘要： The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices.
摘要翻译： 本发明提供了组合半导体和等离子体器件，包括晶体管和光电晶体管。 优选的实施方案是混合等离子体半导体器件具有活性固态半导体区域和在活性固态半导体区域附近产生的等离子体。 本发明的装置被称为混合等离子体半导体器件，其中等离子体，优选微质体与常规固态半导体器件区域配合，以影响或执行诸如由晶体管提供的半导体功能。 本发明提供了具有以前不可用的特性的混合等离子体电子/光子器件系列。 在本发明的晶体管器件中，低温辉光放电是混合晶体管的一部分。 示例性的优选器件包括混合BJT和MOSFET器件。
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公开(公告)号：US09263558B2
公开(公告)日：2016-02-16
申请号：US14452032
申请日：2014-08-05
发明人： J. Gary Eden , Paul A. Tchertchian , Clark J. Wagner , Dane J. Sievers , Thomas J. Houlahan , Benben Li
CPC分类号： H01J17/36 , H01J17/066 , H01J17/49 , H01J17/497 , H01L29/66234 , H01L29/73 , H01L33/02
摘要： A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector. Logic devices are provided in multiple sub collector and sub emitter microplasma devices formed in thin and flexible or not flexible semiconductor materials.
摘要翻译： 复合等离子体半导体器件具有薄且柔性的半导体基底层。 发射极区域扩散到形成pn结的基极层中。 绝缘体层位于基极层和发射极区域的一侧。 基极和发射极通过绝缘体层彼此隔离，并通过绝缘体层与基极层和发射极区域电接触。 薄且柔性的集电极层位于基层的相对侧。 在集电极层中形成微腔并与发射极区对准。 集电极被布置为通过向集电极施加电压来维持微腔内的微量。 将发射极区域的深度和基极层的厚度设定为将基底层的预定薄部分定义为发射极区域和微腔体之间的基极区域。 在微腔中产生的微血管作为收集器。 逻辑器件设置在形成为薄且柔性或不柔性半导体材料的多个子集电极和子发射体微质体器件中。
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公开(公告)号：US09184341B2
公开(公告)日：2015-11-10
申请号：US14330254
申请日：2014-07-14
发明人： J. Gary Eden , Paul A. Tchertchian , Clark J. Wagner , Dane J. Sievers , Thomas J. Houlahan , Benben Li
CPC分类号： H01L33/02 , H01J17/066 , H01J17/49 , H01L29/0821 , H01L29/7317
摘要： Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.
摘要翻译： 优选实施例柔性和晶片上混合等离子体半导体器件具有至少一个活性固态半导体区域; 以及在活性固态半导体区域附近产生的等离子体。 优选的装置是混合等离子体半导体器件，其具有形成在器件层的单侧上的基极，发射和微腔集电极区域。 在阵列中的等离子体收集器的操作期间发出可见光或紫外光。 在优选实施例中，阵列中的各个PBJT用作全色显示器的子像素。
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公开(公告)号：US20140319654A1
公开(公告)日：2014-10-30
申请号：US14330254
申请日：2014-07-14
发明人： J. Gary Eden , Paul A. Tchertchian , Clark J. Wagner , Dane J. Sievers , Thomas J. Houlahan , Benben Li
IPC分类号： H01L33/02
CPC分类号： H01L33/02 , H01J17/066 , H01J17/49 , H01L29/0821 , H01L29/7317
摘要： Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.
摘要翻译： 优选实施例柔性和晶片上混合等离子体半导体器件具有至少一个活性固态半导体区域; 以及在活性固态半导体区域附近产生的等离子体。 优选的装置是混合等离子体半导体器件，其具有形成在器件层的单侧上的基极，发射和微腔集电极区域。 在阵列中的等离子体收集器的操作期间发出可见光或紫外光。 在优选实施例中，阵列中的各个PBJT用作全色显示器的子像素。
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