公开(公告)号：US11996492B2

公开(公告)日：2024-05-28

申请号：US18216496

申请日：2023-06-29

Applicant: THE TRUSTEES OF DARTMOUTH COLLEGE

Inventor： Zhiyuan Wang ,  Xiaoxin Wang ,  Jifeng Liu

IPC: H01L31/0232 ,  H01L27/144 ,  H01L27/146 ,  H01L27/148 ,  H01L31/119

CPC classification number: H01L31/119 ,  H01L27/1446 ,  H01L27/146 ,  H01L27/14875 ,  H01L31/02327

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

公开(公告)号：US11462656B2

公开(公告)日：2022-10-04

申请号：US16606829

申请日：2018-04-20

Applicant: THE TRUSTEES OF DARTMOUTH COLLEGE

Inventor： Zhiyuan Wang ,  Xiaoxin Wang ,  Jifeng Liu

IPC: H01L31/119 ,  H01L27/148 ,  H01L31/0232 ,  H01L27/146 ,  H01L27/144

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

公开(公告)号：US11695090B2

公开(公告)日：2023-07-04

申请号：US17958868

申请日：2022-10-03

Applicant: THE TRUSTEES OF DARTMOUTH COLLEGE

Inventor： Zhiyuan Wang ,  Xiaoxin Wang ,  Jifeng Liu

IPC: H01L31/0232 ,  H01L31/119 ,  H01L27/146 ,  H01L27/148 ,  H01L27/144

CPC classification number: H01L31/119 ,  H01L27/146 ,  H01L27/1446 ,  H01L27/14875 ,  H01L31/02327

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.