公开(公告)号：US10450419B2

公开(公告)日：2019-10-22

申请号：US15326632

申请日：2015-06-30

Applicant: Thin Film Electronics ASA

Inventor： Masahisa Endo ,  Gun Son ,  Yuichi Goto ,  Kentaro Nagai

IPC: C08G77/60 ,  C01B33/02 ,  C01B33/04 ,  C03C17/22 ,  B05D3/02 ,  C01B33/021 ,  C09D5/24 ,  C09D183/16 ,  H01L21/02

Abstract: There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100° C. to 425° C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

公开(公告)号：US10414661B2

公开(公告)日：2019-09-17

申请号：US15523921

申请日：2015-10-13

Applicant: Thin Film Electronics ASA

Inventor： Yuichi Goto ,  Masahisa Endo ,  Gun Son ,  Kentaro Negai

IPC: C01B33/113 ,  C08G77/60 ,  B01J23/46 ,  C01B33/04 ,  H01L21/02

Abstract: A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si-H groups)/(Si-H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

公开(公告)号：US10202283B2

公开(公告)日：2019-02-12

申请号：US15326634

申请日：2015-07-14

Applicant: THIN FILM ELECTRONICS ASA

Inventor： Yuichi Goto ,  Kentaro Nagai ,  Masahisa Endo ,  Gun Son

IPC: C01B33/04

Abstract: A cyclic silane having high purity, a composition containing a polysilane obtained by polymerization of the cyclic silane, and a silicon thin film are disclosed. A method for producing a cyclic silane of the formula (SiH2)n, where n is an integer of 4 to 6, includes reacting a cyclic silane compound of the formula (SiR1R2)n (where R1 and R2 are each a hydrogen atom, a C1-6 alkyl group, or a substituted or unsubstituted phenyl group) with a hydrogen halide in the presence of an aluminum halide to obtain a cyclic silane of the formula (SiR3R4)n (where R3 and R4 are each a halogen atom), and then distilling the solution, and reducing the cyclic silane of the formula (SiR3R4)n with hydrogen or lithium aluminum hydride. The distillation may be carried out at a temperature of 40° C. to 80° C. under a reduced pressure of 0 to 30 Torr.