公开(公告)号：US11258006B2

公开(公告)日：2022-02-22

申请号：US16996559

申请日：2020-08-18

Applicant: TOHOKU UNIVERSITY

Inventor： Tetsuo Endoh ,  Masaaki Niwa ,  Hiroaki Honjo ,  Hideo Sato ,  Shoji Ikeda ,  Toshinari Watanabe

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.

公开(公告)号：US20210091304A1

公开(公告)日：2021-03-25

申请号：US16996559

申请日：2020-08-18

Applicant: TOHOKU UNIVERSITY

Inventor： Tetsuo Endoh ,  Masaaki Niwa ,  Hiroaki Honjo ,  Hideo Sato ,  Shoji Ikeda ,  Toshinari Watanabe

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: [Problem] Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory.
[Means for Resolution] The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film (a second insulating film 20) which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.