公开(公告)号：US20240055272A1

公开(公告)日：2024-02-15

申请号：US18269195

申请日：2021-12-20

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Kohei SAITO ,  Hiroto YARIMIZU ,  Takayuki NEGISHI

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/32134 ,  H01L21/02068 ,  H01L22/12

Abstract: An object of the present invention is to provide a method for producing a semiconductor containing a transition metal with a flat surface, by suppressing loss of flatness (surface roughening) of the transition metal surface, which is caused by anisotropic etching resulting from different etching rates among different crystal planes of the transition metal during etching of the transition metal film with crystal planes of various orientations exposed at the surface. According to the present invention, the problem is solved by any one of the following: a processing method for a semiconductor containing a transition metal, the method including a step of etching the transition metal at an etching amount ratio of 0.1 or greater and 10 or less, the etching amount ratio being a ratio of an etching amount in one crystal plane of the transition metal to an etching amount in another crystal plane of the transition metal; a processing method for a semiconductor containing a transition metal, the method including etching the transition metal, and measuring an etching amount ratio of the transition metal; and a processing liquid for semiconductors, the processing liquid containing an amphoteric surfactant or an amine, the amphoteric surfactant being betaine, imidazoline, glycine or an amine oxide.