公开(公告)号：US20240087911A1

公开(公告)日：2024-03-14

申请号：US18267880

申请日：2021-12-13

Applicant: TOKUYAMA CORPORATION

Inventor： Kohei SAITO ,  Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: H01L21/3213 ,  H01L21/306

CPC classification number: H01L21/32134 ,  H01L21/30604

Abstract: The present invention addresses the issue of providing a method for removing a transition metal oxide adhered to a transition metal film in a process for manufacturing a semiconductor element, and of providing a treatment liquid. Specifically, the present invention provides a method for treating a semiconductor of a transition metal, the method including, in a semiconductor formation process, a step of removing a transition metal oxide and a step of removing the transition metal. The present invention also provides a reducing agent-containing treatment liquid for a transition metal oxide, wherein the concentration of the reducing agent contained in the reducing agent-containing treatment liquid is 0.01 mass % or more and 50 mass % or less.

公开(公告)号：US20240055272A1

公开(公告)日：2024-02-15

申请号：US18269195

申请日：2021-12-20

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Kohei SAITO ,  Hiroto YARIMIZU ,  Takayuki NEGISHI

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/32134 ,  H01L21/02068 ,  H01L22/12

Abstract: An object of the present invention is to provide a method for producing a semiconductor containing a transition metal with a flat surface, by suppressing loss of flatness (surface roughening) of the transition metal surface, which is caused by anisotropic etching resulting from different etching rates among different crystal planes of the transition metal during etching of the transition metal film with crystal planes of various orientations exposed at the surface. According to the present invention, the problem is solved by any one of the following: a processing method for a semiconductor containing a transition metal, the method including a step of etching the transition metal at an etching amount ratio of 0.1 or greater and 10 or less, the etching amount ratio being a ratio of an etching amount in one crystal plane of the transition metal to an etching amount in another crystal plane of the transition metal; a processing method for a semiconductor containing a transition metal, the method including etching the transition metal, and measuring an etching amount ratio of the transition metal; and a processing liquid for semiconductors, the processing liquid containing an amphoteric surfactant or an amine, the amphoteric surfactant being betaine, imidazoline, glycine or an amine oxide.

公开(公告)号：US20240071782A1

公开(公告)日：2024-02-29

申请号：US18237159

申请日：2023-08-23

Applicant: TOKUYAMA CORPORATION

Inventor： Kohei SAITO

IPC: H01L21/56 ,  C09K13/04

CPC classification number: H01L21/566 ,  C09K13/04 ,  H01L21/6835

Abstract: A method for producing a semiconductor treatment liquid used for treating a resin having an ether bond, the method comprising:



heating a phosphoric acid-containing solution to 100° C. or higher and 400° C. or lower to produce a heated solution;
cooling the heated solution to 5° C. or higher and 95° C. or lower to produce a cooled solution; and
mixing the cooled solution with at least one selected from the group consisting of an aqueous hydrogen peroxide solution and an aqueous nitric acid solution.