公开(公告)号：US20180363134A1

公开(公告)日：2018-12-20

申请号：US16009326

申请日：2018-06-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu HONMA ,  Yuka NAKASATO ,  Kohei DOI

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/511 ,  C23C16/52

Abstract: A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.