公开(公告)号：US20220389582A1

公开(公告)日：2022-12-08

申请号：US17804128

申请日：2022-05-26

Applicant: Tokyo Electron Limited

Inventor： Manabu HONMA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/34

Abstract: An apparatus that performs a film forming process includes: a rotary table having one surface on which substrates are placed and for revolving the substrates around a rotary shaft; a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface is separated into a first processing region and a second processing region, and the substrates repeatedly and alternately pass through the first and second processing regions; a vacuum chuck mechanism provided in the rotary table and including suction ports opened to placement regions on which the substrates are placed, to suction and fix the substrates, and suction flow paths provided to communicate with the suction ports; and a switching mechanism configured to switch an operation status of the vacuum chuck mechanism between a full fixed state and a selective release state.

公开(公告)号：US20190136377A1

公开(公告)日：2019-05-09

申请号：US16171522

申请日：2018-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu HONMA ,  Yuka NAKASATO

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: An apparatus for forming a thin film by repeating, plural times, a cycle including supplying and adsorbing a precursor gas onto a substrate and generating a reaction product by allowing the precursor gas on the substrate to react with a reaction gas, which includes: a main precursor gas supply part for supplying the precursor gas; a reaction gas supply part for supplying the reaction gas; an adjustment-purpose precursor gas supply part for supplying an adjustment-purpose precursor gas to adjust an in-plane film thickness distribution of the thin film; and a controller for outputting a control signal to execute a step of forming the thin film using the main precursor gas supply part and the reaction gas supply part, and subsequently a step of supplying the adjustment-purpose precursor gas from the adjustment-purpose precursor gas supply part to compensate for a film thickness of a portion having a relatively thin film thickness.

公开(公告)号：US20180195173A1

公开(公告)日：2018-07-12

申请号：US15862190

申请日：2018-01-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KATO ,  Yukio OHIZUMI ,  Manabu HONMA ,  Takeshi KOBAYASHI

IPC: C23C16/455 ,  C23C14/50 ,  C23C14/04 ,  H01L21/304 ,  H01L21/67 ,  H01L21/687 ,  C23C14/26 ,  C23C14/22 ,  B05C11/10

CPC classification number: C23C16/45551 ,  B05C11/1031 ,  C23C14/042 ,  C23C14/228 ,  C23C14/26 ,  C23C14/505 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/304 ,  H01L21/67051 ,  H01L21/67126 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

公开(公告)号：US20160215395A1

公开(公告)日：2016-07-28

申请号：US14997684

申请日：2016-01-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu HONMA

IPC: C23C16/455

CPC classification number: C23C16/45563 ,  C23C16/45548

Abstract: There is provided a substrate processing apparatus which supplies a processing gas onto a surface of a substrate on a substrate mounting table from a gas nozzle. The apparatus includes: a ring member installed in a leading end side of to the gas nozzle rather than a through-hole and including an inner peripheral surface on which the gas nozzle inserted into the through-hole is mounted, at least one of contours of an outer peripheral surface and the inner peripheral surface being set to a spiral curve or a polygon obtained by linearly approximating the curve; and a pedestal part on which the ring member is mounted at left and right positions spaced apart from each other in a circumference direction of the ring member. A height of a position at which the gas nozzle is supported by the ring member is adjusted with a rotation of the ring member.

Abstract translation: 提供了一种基板处理装置，其从气体喷嘴向基板安装台上的基板的表面供给处理气体。 该装置包括：环形构件，其安装在气体喷嘴的前端侧，而不是通孔，并且包括安装有插入通孔的气体喷嘴的内周面，至少一个轮廓 外周面和内周面被设定为螺旋曲线或通过线性逼近曲线得到的多边形; 以及在所述环部件的圆周方向上彼此隔开的左右位置安装所述环部件的基座部。 通过环构件的旋转来调节气体喷嘴由环构件支撑的位置的高度。

公开(公告)号：US20230257877A1

公开(公告)日：2023-08-17

申请号：US18163949

申请日：2023-02-03

Applicant: Tokyo Electron Limited

Inventor： Ibuki HAYASHI ,  Yasushi TAKEUCHI ,  Manabu HONMA ,  Junnosuke TAGUCHI

IPC: C23C16/44 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/4584

Abstract: A substrate processing apparatus includes: a processing chamber; a rotary table rotatably provided inside the processing chamber; a stage that is rotatable relative to the rotary table at a position spaced apart from a rotation center of the rotary table; a process gas supplier provided above the rotary table; a separation gas supplier to supply a separation gas to separation regions, each of the separation regions being adjacent to a processing region; and a gas exhauster including exhaust ports communicating with an inside of the processing chamber, wherein the exhaust ports are provided in the processing region between the separation regions and are provided above the rotary table.

公开(公告)号：US20230068938A1

公开(公告)日：2023-03-02

申请号：US17820294

申请日：2022-08-17

Applicant: Tokyo Electron Limited

Inventor： Manabu HONMA

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458

Abstract: A film forming apparatus includes: substrate processing chambers, which is formed by partitioning a space in a processing container in a circumferential direction when viewed from top, and in each of which a substrate is received and a receiving port for processing gases is formed to face a central portion of the processing container; a gas supply including a rotating body provided in the central portion of the processing container, and having a first gas supply hole and a second gas supply hole which are formed at different positions on a side peripheral surface of the rotating body along a circumferential direction; and a rotary mechanism configured to rotate the rotating body around a vertical axis such that a first processing gas and a second processing gas are switched and repeatedly supplied to the substrate processing chambers via the receiving ports, respectively.

公开(公告)号：US20160222509A1

公开(公告)日：2016-08-04

申请号：US15007488

申请日：2016-01-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu HONMA

IPC: C23C16/455

CPC classification number: C23C16/4409 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  H01L21/68771 ,  H01L21/68792

Abstract: There is provided a substrate processing apparatus of performing a process by supplying a processing gas on a substrate while rotating the substrate mounted on a rotary table in a vacuum container, which includes: a container main body used as a part including a bottom portion of the vacuum container; a cover part configured to be detachably installed with respect to the container main body to open and close the container main body, the cover part being used as a part including a ceiling portion of the vacuum container; a pillar installed in one of the cover part and the container main body such that the pillar penetrates through a central portion of the rotary table when the cover part is installed on the container main body, and configured to support the cover part with respect to the container main body when the inside of the vacuum container is vacuum-exhausted.

Abstract translation: 提供了一种基板处理装置，其通过在安装在真空容器中的旋转台上的基板旋转的同时在基板上提供处理气体来进行处理，其包括：容器主体，其用作包括底部的部分 真空容器 盖部，其构造成相对于所述容器主体可拆卸地安装以打开和关闭所述容器主体;所述盖部用作包括所述真空容器的顶部的部分; 安装在所述盖部和所述容器主体之一中的支柱，使得当所述盖部安装在所述容器主体上时，所述支柱贯通所述旋转台的中心部，并且被构造成相对于所述盖部支撑所述盖部 当真空容器的内部被真空排空时，容器主体。

公开(公告)号：US20150240357A1

公开(公告)日：2015-08-27

申请号：US14628661

申请日：2015-02-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro TACHIBANA ,  Yuji TAKABATAKE ,  Manabu HONMA

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/45551 ,  C23C16/4581 ,  C23C16/4586

Abstract: A substrate processing apparatus performing substrate processing by supplying a process gas to a circular substrate loaded on a rotatable table in a vacuum container while rotating the substrate, including: a recess formed at one side of the rotatable table to receive the substrate; a heater heating the rotatable table to heat the substrate to 600 degrees or more for processing; and six support pins disposed on a bottom surface of the recess such that the support pins are respectively placed at vertices of a regular hexagon, support the substrate at locations separated a distance of two-thirds (2/3) of a radius of the substrate from a center of the substrate, and support the substrate in a state of being raised from the bottom surface of the recess.

Abstract translation: 一种基板处理装置，通过在旋转基板的同时将加工气体供给到装载在真空容器的旋转台上的圆形基板上进行基板处理，包括：形成在可旋转台的一侧以容纳基板的凹部; 加热所述可旋转台以将所述基板加热至600度以上以进行加工; 以及设置在凹部的底表面上的六个支撑销，使得支撑销分别放置在正六边形的顶点处，将基板支撑在分离基板的半径的三分之二（2/3）的距离的位置处 从衬底的中心，并且在从凹部的底表面升高的状态下支撑衬底。

公开(公告)号：US20140366808A1

公开(公告)日：2014-12-18

申请号：US14302523

申请日：2014-06-12

Applicant: Tokyo Electron Limited

Inventor： Manabu HONMA

IPC: C23C16/44

CPC classification number: C23C16/4409 ,  H01J37/32513

Abstract: A gas processing apparatus includes a process chamber for installing a process target therein, a through-hole being air-tightly in communication with a gas supply pipe, an injector for supplying gas into the process chamber, a sleeve being engaged to an outer peripheral surface of the injector inside the through-hole, an annular sealing member engaged to the outer peripheral surface of the injector, an engagement surface facing the sealing member, and a pressing part for pressing the sleeve toward the outer side of the process chamber. The pressing part compresses the sealing member by exerting pressure to the engagement surface from an end surface of the sleeve toward the sealing member, so that an inside of the injector and an outside of the injector are air-tightly sealed.

Abstract translation: 气体处理装置包括：处理室，用于在其中安装处理目标;气体与气体供给管连通的通孔;用于向处理室供给气体的喷射器;与外周面接合的套筒; 所述注射器在所述通孔内部，与所述注射器的外周表面接合的环形密封构件，与所述密封构件相对的接合面，以及用于将所述套筒朝向所述处理室的外侧按压的按压部。 按压部件通过从套筒的端面朝向密封部件施加压力到接合面来压缩密封部件，使得喷射器的内部和喷射器的外部气密地密封。

公开(公告)号：US20240395585A1

公开(公告)日：2024-11-28

申请号：US18663611

申请日：2024-05-14

Applicant: Tokyo Electron Limited

Inventor： Manabu HONMA

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/677

Abstract: A substrate processing apparatus includes: a boat configured to hold substrates by arranging the substrates in a horizontal posture and in multiple stages along a vertical direction; a plate-shaped member provided along an outer periphery of each substrate of the substrates held by the boat; and a driver configured to change a relative position between the boat and the plate-shaped member in the vertical direction.