公开(公告)号：US20160020135A1

公开(公告)日：2016-01-21

申请号：US14854226

申请日：2015-09-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei KAWAMURA ,  Yasuo KOBAYASHI ,  Toshihisa NOZAWA ,  Kiyotaka ISHIBASHI

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

CPC classification number: H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract translation: 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

公开(公告)号：US20150232993A1

公开(公告)日：2015-08-20

申请号：US14624799

申请日：2015-02-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihiko IWAO ,  Takahiro HIRANO ,  Kiyotaka ISHIBASHI ,  Satoru KAWAKAMI

IPC: C23C16/505 ,  C23C16/46 ,  C23C16/511 ,  C23C16/455 ,  C23C16/458

Abstract: A substrate processing apparatus of the present disclosure includes a placing table provided to be rotatable around an axis; a gas supplying section that supplies gas to regions through which a substrate sequentially passes while being moved in a circumferential direction with respect to the axis as the placing table is rotated; and a plasma generating section that generates plasma using the supplied gas. The plasma generating section includes an antenna that radiates microwaves, and a coaxial waveguide that supplies the microwaves to the antenna. Line segments constituting a plane shape of the antenna when viewed in a direction along the axis include two line segments which are spaced to be distant from each other as being spaced away from the axis. The coaxial waveguide supplies the microwaves to the antenna from a gravity center of the antenna.

Abstract translation: 本公开的基板处理装置包括：设置成可绕轴线旋转的放置台; 气体供给部，其在与所述载置台旋转时相对于所述轴向周向移动的同时向基板依次通过的区域供给气体; 以及使用所供给的气体产生等离子体的等离子体产生部。 等离子体产生部分包括辐射微波的天线和将微波馈送到天线的同轴波导。 构成天线的平面形状的线段在沿着轴线的方向观察时包括彼此间隔开距离轴线的两个线段。 同轴波导从天线的重心将微波提供给天线。

公开(公告)号：US20150197853A1

公开(公告)日：2015-07-16

申请号：US14597929

申请日：2015-01-15

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU TECHNO ARCH CO., LTD.

Inventor： Kiyotaka ISHIBASHI ,  Yoshiyuki KIKUCHI ,  Seiji SAMUKAWA

IPC: C23C16/50 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45591 ,  C23C16/045 ,  C23C16/4584 ,  C23C16/511 ,  H01J37/32357 ,  H01J37/32422

Abstract: Provided is a substrate processing including: a plasma generation source configured to generate the plasma within the processing container; a substrate holding mechanism configured to hold the substrate within the processing container; a separation plate disposed between the plasma generation source and the substrate holding mechanism and having a plurality of openings formed therein, in which the plurality of openings are configured to neutralize the plasma generated in the plasma generation source so as to form neutral particles, and to irradiate the neutral particles onto the substrate; and a directivity adjusting mechanism configured to adjust directivity of the neutral particles irradiated onto the substrate such that a plurality of peak values of an incident angle distribution of the neutral particles on the substrate are distributed at positions which are deviated from a normal direction of the substrate and located on both sides of the normal direction.

Abstract translation: 提供了一种基板处理，包括：等离子体产生源，被配置为在处理容器内产生等离子体; 基板保持机构，其构造成将所述基板保持在所述处理容器内; 设置在所述等离子体产生源和所述基板保持机构之间并具有形成在其中的多个开口的分离板，其中所述多个开口被配置为中和所述等离子体发生源中产生的等离子体以形成中性粒子，并且 将中性粒子照射到基底上; 以及方向性调整机构，被配置为调节照射到基板上的中性粒子的方向性，使得基板上的中性粒子的入射角分布的多个峰值分布在从基板的法线方向偏离的位置 并位于正常方向的两侧。

公开(公告)号：US20130081763A1

公开(公告)日：2013-04-04

申请号：US13684850

申请日：2012-11-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong TIAN ,  Tetsuya NISHIZUKA ,  Kiyotaka ISHIBASHI ,  Toshihisa NOZAWA

IPC: H01L21/461

CPC classification number: H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

Abstract: A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions arranged along a circle in a surface of the ceiling plate so as to form plural radially disposed virtual convex portions in a place between the concave portions, the surface facing toward an inside of the process chamber. A thickness of places where the concave portions are formed in the ceiling plate and another thickness of other places where the concave portions are not formed in the ceiling plate are determined so that the number of propagation modes of microwaves is different.

Abstract translation: 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶棚板允许从天花板板设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形布置的多个突起部分，以便 在凹部之间的位置处形成多个径向设置的虚拟凸部，该表面面向处理室的内部。 确定在顶板中形成凹部的位置的厚度和在顶板中没有形成凹部的其他部分的厚度，使得微波的传播模式的数量不同。

公开(公告)号：US20200378005A1

公开(公告)日：2020-12-03

申请号：US16883598

申请日：2020-05-26

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Kiyotaka ISHIBASHI

IPC: C23C16/50 ,  H01J37/32 ,  H01L21/673 ,  C23C16/458 ,  C23C16/34 ,  C23C16/44

Abstract: A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

公开(公告)号：US20170253972A1

公开(公告)日：2017-09-07

申请号：US15600467

申请日：2017-05-19

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU TECHNO ARCH CO., LTD.

Inventor： Kiyotaka ISHIBASHI ,  Yoshiyuki KIKUCHI ,  Seiji SAMUKAWA

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/511 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/45591 ,  C23C16/045 ,  C23C16/4584 ,  C23C16/511 ,  H01J37/32357 ,  H01J37/32422

Abstract: Provided is a substrate processing including: a plasma generation source configured to generate the plasma within the processing container; a substrate holding mechanism configured to hold the substrate within the processing container; a separation plate disposed between the plasma generation source and the substrate holding mechanism and having a plurality of openings formed therein, in which the plurality of openings are configured to neutralize the plasma generated in the plasma generation source so as to form neutral particles, and to irradiate the neutral particles onto the substrate; and a directivity adjusting mechanism configured to adjust directivity of the neutral particles irradiated onto the substrate such that a plurality of peak values of an incident angle distribution of the neutral particles on the substrate are distributed at positions which are deviated from a normal direction of the substrate and located on both sides of the normal direction.

公开(公告)号：US20150069674A1

公开(公告)日：2015-03-12

申请号：US14542793

申请日：2014-11-17

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY

Inventor： Masahiro OKESAKU ,  Tadahiro OHMI ,  Tetsuya GOTO ,  Takaaki MATSUOKA ,  Toshihisa NOZAWA ,  Atsutoshi INOKUCHI ,  Kiyotaka ISHIBASHI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract translation: 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。