公开(公告)号：US20220178014A1

公开(公告)日：2022-06-09

申请号：US17631188

申请日：2020-07-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEDA ,  Atsushi SHIMADA ,  Katsushi OIKAWA ,  Tetsuya MIYASHITA

IPC: C23C14/35 ,  C23C14/54 ,  C23C14/52 ,  C23C14/34 ,  H01J37/34

Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

公开(公告)号：US20250059640A1

公开(公告)日：2025-02-20

申请号：US18938913

申请日：2024-11-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEDA ,  Atsushi SHIMADA ,  Katsushi OIKAWA ,  Tetsuya MIYASHITA

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/52 ,  C23C14/54 ,  H01J37/34

Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

公开(公告)号：US20220336194A1

公开(公告)日：2022-10-20

申请号：US17642992

申请日：2020-09-04

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki YOKOHARA ,  Koji MAEDA ,  Yasunobu SUZUKI ,  Atsushi SHIMADA ,  Takuya UMISE

IPC: H01J37/32

Abstract: A plasma processing apparatus for performing plasma processing on a substrate includes: a plasma generator configured to generate plasma in a processing container; a support structure configured to mount the substrate on a tilted mounting surface in the processing container and rotatably support the substrate; a first slit plate made of quartz and provided between the plasma generator and the support structure, the first slit plate having first slits formed in the first slit plate; and a second slit plate made of quartz and provided between the plasma generator and the support structure and below the first slit plate, the second slit plate having second slits formed in the second slit plate, wherein the first slits are staggered from adjacent ones of the second slits in a reverse direction of a tilting direction of the mounting surface.

公开(公告)号：US20220319819A1

公开(公告)日：2022-10-06

申请号：US17631855

申请日：2020-07-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEDA

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/35 ,  C23C14/50 ,  C23C14/56

Abstract: There is provided a substrate processing system comprising: a plurality of transfer modules having transfer mechanisms configured to transfer substrates; and a plurality of process modules connected to the plurality of transfer modules. The transfer mechanisms of the plurality of transfer modules transfer a plurality of substrates sequentially and serially to the plurality of process modules, and each of the plurality of transfer modules has an aligner configured to align a substrate when transferring the substrate to the process module connected to a relevant transfer module.

公开(公告)号：US20210280777A1

公开(公告)日：2021-09-09

申请号：US17193545

申请日：2021-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu NAKAGAWASAI ,  Koji MAEDA ,  Shinji ORIMOTO ,  Motoi YAMAGATA

IPC: H01L43/12 ,  C23C14/54 ,  C23C14/50

Abstract: A substrate processing apparatus includes a processing chamber where a substrate support on which a substrate is placed and a target holder configured to hold a target are disposed, a freezing device disposed with a gap with respect to a bottom surface of the substrate support and having a chiller and a cold heat medium laminated on the chiller, and a rotating device configured to rotate the substrate support. The substrate processing apparatus further includes a first elevating device configured to raise and lower the substrate support, a coolant channel formed in the chiller to supply a coolant to the gap, and a cold heat transfer material disposed in the gap and being in contact with the substrate support and the cold heat medium so as to transfer heat therebetween.

公开(公告)号：US20210005486A1

公开(公告)日：2021-01-07

申请号：US16919888

申请日：2020-07-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keita HORIUCHI ,  Koji MAEDA ,  Morihiro TAKANASHI

IPC: H01L21/67 ,  H01L21/687 ,  B65G47/90

Abstract: A substrate transfer apparatus for transferring a substrate includes a plurality of vacuum transfer chambers, each having therein a substrate transfer mechanism for holding and transferring the substrate, and an intermediate chamber disposed between the vacuum transfer chambers adjacent to each other. When one of the vacuum transfer chambers adjacent to each other is set as a first vacuum transfer chamber and the other is set as a second vacuum transfer chamber, a first substrate loading/unloading port is disposed between the intermediate chamber and the first vacuum transfer chamber and a second substrate loading/unloading port is disposed between the intermediate chamber and the second vacuum transfer chamber. A gate valve is provided only for the second substrate loading/unloading port. Further, the first and the second substrate loading/unloading port have different height positions.

公开(公告)号：US20200373133A1

公开(公告)日：2020-11-26

申请号：US16881693

申请日：2020-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo HATANO ,  Naoki WATANABE ,  Koji MAEDA

IPC: H01J37/32 ,  H01L21/687 ,  H01J37/34 ,  H01L43/12 ,  C23C14/34 ,  C23C14/50

Abstract: A stage device for holding a substrate in a processing apparatus for processing the substrate includes a stage, a stage rotating mechanism, and a cold heat transfer mechanism. The stage is configured to hold the substrate in a processing chamber. The stage rotating mechanism includes a rotation shaft extending downward from a center of a bottom surface of the stage and a motor configured to rotate the stage via the rotation shaft. The cold heat transfer mechanism includes at least one cold heat transfer body that is fixedly disposed at a position spaced away from the rotation shaft below the stage and is configured to transfer cold heat of a chiller. The cold heat transfer mechanism is disposed with a gap between the cold heat transfer mechanism and the stage.