公开(公告)号：US20250059640A1

公开(公告)日：2025-02-20

申请号：US18938913

申请日：2024-11-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEDA ,  Atsushi SHIMADA ,  Katsushi OIKAWA ,  Tetsuya MIYASHITA

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/52 ,  C23C14/54 ,  H01J37/34

Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

公开(公告)号：US20240274420A1

公开(公告)日：2024-08-15

申请号：US18566990

申请日：2022-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SHIMADA

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3452 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3455 ,  H01J2237/332

Abstract: In this film formation method, during sputter treatment in which a selected target selected from among a plurality of targets is subjected to sputtering, a film formation device performs a selected-side reciprocal action in which a magnet disposed on the selected target is caused to move reciprocally in parallel with a direction of extension of the selected target. Moreover, in this film formation method, along with the selected-side reciprocal action, at least one of the following is performed: an unselected-side reciprocal action, in which a magnet disposed on an unselected target not subjected to sputtering is caused to move in parallel with a direction of extension of the unselected target; or a distancing action, in which the magnet is caused to move away from the unselected target.

公开(公告)号：US20220336194A1

公开(公告)日：2022-10-20

申请号：US17642992

申请日：2020-09-04

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki YOKOHARA ,  Koji MAEDA ,  Yasunobu SUZUKI ,  Atsushi SHIMADA ,  Takuya UMISE

IPC: H01J37/32

Abstract: A plasma processing apparatus for performing plasma processing on a substrate includes: a plasma generator configured to generate plasma in a processing container; a support structure configured to mount the substrate on a tilted mounting surface in the processing container and rotatably support the substrate; a first slit plate made of quartz and provided between the plasma generator and the support structure, the first slit plate having first slits formed in the first slit plate; and a second slit plate made of quartz and provided between the plasma generator and the support structure and below the first slit plate, the second slit plate having second slits formed in the second slit plate, wherein the first slits are staggered from adjacent ones of the second slits in a reverse direction of a tilting direction of the mounting surface.

公开(公告)号：US20180001597A1

公开(公告)日：2018-01-04

申请号：US15638099

申请日：2017-06-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TOSHIMA ,  Atsushi SHIMADA ,  Tatsuo HIRASAWA ,  Tatsuo HATANO ,  Shinji FURUKAWA

IPC: B32B15/20 ,  H01L23/532 ,  C01G23/00 ,  C01G41/00

CPC classification number: B32B15/20 ,  C01G23/00 ,  C01G41/00 ,  H01L21/768 ,  H01L23/53238

Abstract: A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film of the object cooled to a temperature of 209 K or less.

公开(公告)号：US20140161992A1

公开(公告)日：2014-06-12

申请号：US14098465

申请日：2013-12-05

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Kenji SUZUKI ,  Atsushi SHIMADA

IPC: H05K3/10

CPC classification number: H05K3/107 ,  C23C14/358 ,  H01L21/02063 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K2201/0338 ,  H01L2924/00

Abstract: There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing.

Abstract translation: 提供了一种用于通过在基板的含Si膜中以预定图案形成的凹部中填充Cu来形成Cu布线的Cu布线形成方法。 Cu布线形成方法包括通过化学气相沉积在至少在凹部的表面上形成通过与下面的基底反应而成为自对准阻挡膜的Mn膜，通过物理气相沉积形成Cu膜以填充 具有Cu膜的凹部，并且通过化学机械抛光对基板的整个表面进行抛光来在凹部中形成Cu布线。

公开(公告)号：US20150243556A1

公开(公告)日：2015-08-27

申请号：US14620886

申请日：2015-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SHIMADA ,  Shinji FURUKAWA ,  Tatsuo HATANO

IPC: H01L21/768

CPC classification number: H01L21/76882 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/5806 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76876

Abstract: A method of supplying cobalt to a recess formed in an insulation film of an object to be processed is disclosed. In one embodiment, the method includes forming a cobalt nitride film on a surface of the insulation film comprising a surface defining the recess, forming a cobalt film on the cobalt nitride film, and heating the cobalt film.

Abstract translation: 公开了一种向被处理物的绝缘膜形成的凹部供给钴的方法。 在一个实施例中，该方法包括在绝缘膜的表面上形成氮化钴膜，该表面包括限定凹部的表面，在氮化钴膜上形成钴膜，并加热钴膜。

公开(公告)号：US20220178014A1

公开(公告)日：2022-06-09

申请号：US17631188

申请日：2020-07-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEDA ,  Atsushi SHIMADA ,  Katsushi OIKAWA ,  Tetsuya MIYASHITA

IPC: C23C14/35 ,  C23C14/54 ,  C23C14/52 ,  C23C14/34 ,  H01J37/34

Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

公开(公告)号：US20160251746A1

公开(公告)日：2016-09-01

申请号：US15032688

申请日：2014-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiko KOJIMA ,  Hiroshi SONE ,  Atsushi GOMI ,  Kanto NAKAMURA ,  Toru KITADA ,  Yasunobu SUZUKI ,  Yusuke SUZUKI ,  Koichi TAKATSUKI ,  Tatsuo HIRASAWA ,  Keisuke SATO ,  Chiaki YASUMURO ,  Atsushi SHIMADA

IPC: C23C14/00 ,  H01L43/08 ,  H01J37/32 ,  C23C14/16 ,  H01J37/34 ,  H01L43/12 ,  H01L43/10

CPC classification number: C23C14/0036 ,  C23C14/0063 ,  C23C14/081 ,  C23C14/165 ,  C23C14/352 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3405 ,  H01J37/3426 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Abstract translation: 根据一个实施例的沉积装置包括处理容器。 安装台安装在加工容器的内部，金属靶被安装在安装台的上方。 此外，头部构造成朝向安装台注入氧化气体。 该头部构造成在限定在金属靶和安装在安装台上的目标物体的安装区域之间的第一区域和与限定在金属靶和安装区域之间的空间间隔开的第二区域之间移动。