公开(公告)号：US20200294799A1

公开(公告)日：2020-09-17

申请号：US16818491

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya SAITOU ,  Takashi KAMIO ,  Kazuyoshi YAMAZAKI ,  Naoshige FUSHIMI

IPC: H01L21/02 ,  H01L21/67

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1

公开(公告)号：US20190024234A1

公开(公告)日：2019-01-24

申请号：US16035817

申请日：2018-07-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi KAMIO ,  Yu NUNOSHIGE

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/458 ,  H01L21/67

Abstract: A gas processing apparatus includes: a mounting part; a gas supply part located above the mounting part and having a plurality of first gas supply holes; a gas supply path forming part configured to form a supply path of a processing gas, the gas supply path forming part including a flat opposing surface which faces the gas supply part from above and defines a first diffusion space for diffusing the processing gas in a lateral direction; a recess surrounding a central portion of the opposing surface; and a plurality of gas dispersion portions located in the recess surrounding the central portion of the opposing surface without protruding from the opposing surface, each of the plurality of gas dispersion portions having a plurality of gas discharge holes extending along a circumferential direction so as to laterally disperse the processing gas supplied from the supply path in the first diffusion space.

公开(公告)号：US20200048765A1

公开(公告)日：2020-02-13

申请号：US16530160

申请日：2019-08-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirotaka KUWADA ,  Takashi KAMIO ,  Yu NUNOSHIGE ,  Yasushi FUJII

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34

Abstract: There is provided a gas processing apparatus, including: a vacuum vessel; a mounting part installed in the vacuum vessel and configured to mount a substrate; an opposing part configured to face the mounting part and including first gas discharge ports configured to discharge a processing gas to the substrate; a first diffusion space configured to communicate with the first gas discharge ports; second gas discharge ports formed in a ceiling portion and configured to supply the processing gas to a central portion of the first diffusion space; a second diffusion space configured to communicate with the second gas discharge ports; a gas supply path installed at an upstream side of the second diffusion space and configured to supply the processing gas to the second diffusion space; and third gas discharge ports configured to be opened to an outer portion of the ceiling portion in an oblique direction.

公开(公告)号：US20200208267A1

公开(公告)日：2020-07-02

申请号：US16726369

申请日：2019-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi KAMIO ,  Tetsuya SAITOU ,  Kai SHIONO

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/06

Abstract: A film-forming apparatus includes a processing container having a vacuum atmosphere therein, a stage having a heater and disposed in the processing container to load a substrate thereon, a gas discharge mechanism provided at a position to face the stage, and an exhaust part configured to exhaust an inside of the processing container. The gas discharge mechanism includes a gas intake port configured to introduce a processing gas into the processing container, a first plate-shaped member having a first opening formed in a more radially outward position than the gas intake port and a shower plate disposed between the first plate-shaped member and the stage to supply the processing gas from the first opening to a process space through a plurality of gas holes.

公开(公告)号：US20180112309A1

公开(公告)日：2018-04-26

申请号：US15787916

申请日：2017-10-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi KAMIO ,  Toshiaki FUJISATO

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4412 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/45591 ,  C23C16/52

Abstract: There is provided a processing apparatus including a stage disposed inside a chamber, and a cover member provided in an outer edge portion of the stage and configured to partition an interior of the chamber into a processing space above the stage and a bottom space below the stage. The cover member includes a first protrusion portion configured to make surface-to-surface contact with a surface of the stage, a second protrusion portion spaced apart from the first protrusion portion and configured to make surface-to-surface contact with the surface of the stage, and an exhaust path provided between the first protrusion portion and the second protrusion portion and configured to exhaust a gas from a buffer space formed by the cover member and the stage.

公开(公告)号：US20160177445A1

公开(公告)日：2016-06-23

申请号：US14978405

申请日：2015-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuyoshi TAKAHASHI ,  Masaki SANO ,  Takashi KAMIO ,  Toshio TAKAGI

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45565 ,  C23C16/45589

Abstract: A film forming apparatus includes a mounting table mounting a substrate thereon, a gas diffusion unit above the mounting table, gas dispersion units above the gas diffusion unit, and an evacuation unit to evacuate a processing chamber. The gas diffusion unit has gas injection holes for injecting a gas in a shower shape. Outermost gas injection holes are arranged outward of an outer circumference of the substrate when seen from the top. The gas dispersion units face the gas diffusion unit through a diffusion space therebetween. Each of the gas dispersion units has gas discharge holes formed along a circumferential direction thereof to disperse a gas horizontally into the diffusion space. The gas dispersion units include at least three first gas dispersion units along a first circle, and at least three second gas dispersion units along a second circle concentrically disposed at an outer side of the first circle.

Abstract translation: 一种成膜装置包括：安装基板的安装台，安装台上方的气体扩散单元，气体扩散单元上方的气体分散单元，以及抽出处理室的排气单元。 气体扩散单元具有用于喷射淋浴形状的气体的气体注入孔。 当从顶部观察时，最外部的气体注入孔布置在基板的外周的外侧。 气体分散单元通过其间的扩散空间面对气体扩散单元。 每个气体分散单元具有沿其圆周方向形成的气体排出孔，以将气体水平地分散到扩散空间中。 气体分散单元包括沿着第一圆的至少三个第一气体分散单元和沿着同心地设置在第一圆的外侧的第二圆的至少三个第二气体分散单元。