公开(公告)号：US10734221B2

公开(公告)日：2020-08-04

申请号：US16028656

申请日：2018-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taiki Kato ,  Hisashi Higuchi ,  Kosuke Yamamoto ,  Ayuta Suzuki ,  Kazuyoshi Matsuzaki ,  Yuji Seshimo ,  Susumu Takada ,  Yoshihiro Takezawa

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L29/423 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  H01L21/28 ,  H01L49/02 ,  H01L21/443

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

公开(公告)号：US11905595B2

公开(公告)日：2024-02-20

申请号：US17163889

申请日：2021-02-01

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Toru Ishii ,  Yuji Seshimo ,  Yuichiro Sase

IPC: C23C16/46 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/4584 ,  C23C16/45536 ,  C23C16/463 ,  C23C16/52

Abstract: A film deposition apparatus includes a rotary table disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

公开(公告)号：US12205817B2

公开(公告)日：2025-01-21

申请号：US17647032

申请日：2022-01-05

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Toru Ishii ,  Yuji Seshimo ,  Yuichiro Sase

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02

Abstract: A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.