公开(公告)号：US20210265135A1

公开(公告)日：2021-08-26

申请号：US17182896

申请日：2021-02-23

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Yuya MINOURA ,  Taku GOHIRA

IPC: H01J37/32

Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.

公开(公告)号：US20210375635A1

公开(公告)日：2021-12-02

申请号：US17326598

申请日：2021-05-21

Applicant: Tokyo Electron Limited

Inventor： Yuya MINOURA

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method prepares a substrate having laminated films including a first film and a second film that are alternately laminated, and a mask on the laminated films, and etches the laminated films by plasma of a process gas including a carbon and fluorine-containing gas. The carbon and fluorine-containing gas includes an unsaturated bond of C, and a CF3 group.

公开(公告)号：US20230360891A1

公开(公告)日：2023-11-09

申请号：US18220403

申请日：2023-07-11

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Yuya MINOURA ,  Taku GOHIRA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/332

Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.

公开(公告)号：US20230335409A1

公开(公告)日：2023-10-19

申请号：US18213700

申请日：2023-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuya MINOURA ,  Takashi ENOMOTO

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/31144

Abstract: A substrate processing method includes providing a substrate formed with a stacked film including at least an etching target film, an underlying layer disposed below the etching target film, and a mask disposed above the etching target film; etching the etching target film through the mask using plasma; and performing heat treatment on the substrate at a predetermined temperature after the etching. At least one of the mask and the underlying layer contains a transition metal.

公开(公告)号：US20240339307A1

公开(公告)日：2024-10-10

申请号：US18750473

申请日：2024-06-21

Applicant: Tokyo Electron Limited

Inventor： Yuya MINOURA ,  Takayuki SUZUKI ,  Takahiro MURAKAMI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3288 ,  H01J37/32082 ,  H01L21/67063 ,  H01L21/67098 ,  H01L21/67248

Abstract: A method of performing maintenance on a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber and a gas supplier configured to supply a processing gas to an interior of the chamber. The method includes (a) supplying a first processing gas from the gas supplier to the interior of the chamber, and forming a protective film on a surface of a member in the interior of the chamber, and (b) after (a), exposing the interior of the chamber to an ambient environment and performing the maintenance on the substrate processing apparatus.

公开(公告)号：US20170133204A1

公开(公告)日：2017-05-11

申请号：US15345106

申请日：2016-11-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Toyohiro KAMADA ,  Hiroyuki IKUTA ,  Yuya MINOURA

IPC: H01J37/32 ,  C23C16/50

Abstract: There is provided a member for a plasma processing apparatus, the member constituting the plasma processing apparatus configured to generate plasma in a processing space of a processing container and to perform plasma processing on an object to be processed. The member includes a face of the member exposed to the plasma and coated with a protection film. The protection film includes a columnar structure having a plurality of column-shaped portions in substantially cylindrical shapes extending in a thickness direction of the film. The plurality of column-shaped portions is adjacent to one another without gaps therebetween.