专利检索 ap:("TOKYO ELECTRON LIMITED" OR "OSAKA UNIVERSITY") AND inv:"Koji Neishi" 第 1 页

1.

发明授权
Method of forming nitride semiconductor film 有权

公开(公告)号：US12094710B2

公开(公告)日：2024-09-17

申请号：US17219320

申请日：2021-03-31

申请人： TOKYO ELECTRON LIMITED , OSAKA UNIVERSITY

发明人： Nobuaki Takahashi , Hitoshi Miura , Koji Neishi , Ryuji Katayama , Yusuke Mori , Masayuki Imanishi

IPC分类号： C23C14/00 , C23C14/06 , C23C14/34 , H01J37/34 , H01L21/02

CPC分类号： H01L21/02631 , C23C14/0641 , C23C14/34 , H01J37/3426 , H01L21/02458 , H01L21/0254 , H01J2237/332 , H01L21/02389 , H01L21/0242 , H01L21/02513 , H01L21/02576 , H01L21/02579

摘要： The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.