STRIPPING SOLUTION FOR PHOTOLITHOGRAPHY AND PATTERN FORMATION METHOD
    1.
    发明申请
    STRIPPING SOLUTION FOR PHOTOLITHOGRAPHY AND PATTERN FORMATION METHOD 有权
    剥离解决方案用于光刻和图案形成方法

    公开(公告)号:US20140087313A1

    公开(公告)日:2014-03-27

    申请号:US14026407

    申请日:2013-09-13

    IPC分类号: G03F7/42

    CPC分类号: G03F7/425 G03F7/426

    摘要: A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.

    摘要翻译: 一种用于光刻的剥离溶液,可以有效地剥离光致抗蚀剂图案的残留材料并蚀刻残留材料,并且对SiO 2和各种金属材料具有优异的耐腐蚀性; 以及使用剥离溶液形成图案的方法。 使用规定的碱性化合物作为用于光刻的剥离溶液中的氢氟酸的抗衡胺,并将用于光刻的剥离溶液调节至在23℃下测得的pH不大于6.0或8.5或更高。

    CLEANING LIQUID, AND ANTICORROSIVE AGENT
    3.
    发明申请
    CLEANING LIQUID, AND ANTICORROSIVE AGENT 审中-公开
    清洁液和抗菌剂

    公开(公告)号:US20130172224A1

    公开(公告)日:2013-07-04

    申请号:US13728728

    申请日:2012-12-27

    IPC分类号: C23G1/26

    CPC分类号: C23G1/26 C23F11/161 C23G1/20

    摘要: In a cleaning liquid containing (A) an anticorrosive agent, and (B) a solvent, a compound represented by the following formula (1): wherein, R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, wherein provided that m is 2 or 3, R may be the same or different; or the following formula (2): HS—(CH2)x—OH  (2) wherein, x is an integer of no less than 3, is used as the anticorrosive agent (A).

    摘要翻译: 在含有(A)防腐剂的清洗液和(B)溶剂中,由下式(1)表示的化合物:其中,R表示取代基; m为1〜3的整数。 n为0〜3的整数,m为2或3的情况下,R可以相同或不同, 或下式(2)表示:HS-(CH2)x-OH(2)其中x为不小于3的整数,用作防腐剂(A)。

    Stripping solution for photolithography and pattern formation method
    7.
    发明授权
    Stripping solution for photolithography and pattern formation method 有权
    剥离溶液用于光刻和图案形成方法

    公开(公告)号:US09436094B2

    公开(公告)日:2016-09-06

    申请号:US14026407

    申请日:2013-09-13

    IPC分类号: G03F7/42

    CPC分类号: G03F7/425 G03F7/426

    摘要: A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.

    摘要翻译: 一种用于光刻的剥离溶液,可以有效地剥离光致抗蚀剂图案的残留材料并蚀刻残留材料,并且对SiO 2和各种金属材料具有优异的耐腐蚀性; 以及使用剥离溶液形成图案的方法。 使用规定的碱性化合物作为用于光刻的剥离溶液中的氢氟酸的抗衡胺,并将用于光刻的剥离溶液调节至在23℃下测得的pH不大于6.0或8.5或更高。

    CLEANING LIQUID AND ANTICORROSIVE AGENT
    8.
    发明申请
    CLEANING LIQUID AND ANTICORROSIVE AGENT 有权
    清洁液体和抗菌剂

    公开(公告)号:US20140018281A1

    公开(公告)日:2014-01-16

    申请号:US14021505

    申请日:2013-09-09

    IPC分类号: C23G1/26

    CPC分类号: C23G1/26 C23F11/161 C23G1/20

    摘要: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH  (2), in which x is an integer of no less than 3.

    摘要翻译: 一种清洗具有包含铜或含铜合金的金属层的基板的方法,所述方法包括使用包括由下式(1)和(2)中的一个或两个表示的巯基化合物的清洗液清洗所述基板, 和含有水和水溶性有机溶剂的溶剂:其中R表示取代基; m为1〜3的整数。 n为0〜3的整数,当m为2或3时,R可以相同或不同, HS-(CH2)x-OH(2),其中x为不小于3的整数。

    Cleaning liquid and anticorrosive agent comprising a mercapto compound and solvent
    9.
    发明授权
    Cleaning liquid and anticorrosive agent comprising a mercapto compound and solvent 有权
    包含巯基化合物和溶剂的清洁液体和防腐剂

    公开(公告)号:US08802610B2

    公开(公告)日:2014-08-12

    申请号:US14021505

    申请日:2013-09-09

    IPC分类号: C11D7/34

    CPC分类号: C23G1/26 C23F11/161 C23G1/20

    摘要: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH  (2), in which x is an integer of no less than 3.

    摘要翻译: 一种清洗具有包含铜或含铜合金的金属层的基板的方法,所述方法包括使用包括由下式(1)和(2)中的一个或两个表示的巯基化合物的清洗液清洗所述基板, 和含有水和水溶性有机溶剂的溶剂:其中R表示取代基; m为1〜3的整数。 n为0〜3的整数,当m为2或3时,R可以相同或不同, HS-(CH2)x-OH(2),其中x为不小于3的整数。