Solid-state image sensor and method of manufacturing the same

    公开(公告)号:US11205671B2

    公开(公告)日:2021-12-21

    申请号:US16454157

    申请日:2019-06-27

    Abstract: A solid-state image sensor including a semiconductor substrate having photoelectric conversion elements being two-dimensionally formed therein, and a color filter layer formed on the semiconductor substrate and having color filters of colors being two-dimensionally formed therein in a pattern such that the color filters correspond respectively to the photoelectric conversion elements. The color filter layer satisfies formulas (1) and (2): 200≤A≤700  (1) C≤A+200  (2) where A represents a thickness in nm of a first-color color filter of a first color among the colors, and C represents a thickness in nm of color filters of colors other than the first color.

    Reflective photomask and production method therefor

    公开(公告)号:US09927692B2

    公开(公告)日:2018-03-27

    申请号:US15057548

    申请日:2016-03-01

    CPC classification number: G03F1/24

    Abstract: A reflective photomask includes: a substrate; a multilayer reflection film formed on the substrate and reflecting exposure light including light with a wavelength of about 5 nm to 15 nm for lithography; an absorption film formed on the multilayer reflection film and absorbing the exposure light, and formed therein with a circuit pattern or a circuit pattern forming region where the circuit pattern is formed; a shading region formed by removing part of the multilayer reflection film and the absorption film on the substrate, on an outer peripheral side of the circuit pattern or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film; and a plurality of projections formed at a pitch of about 3000 nm or less on part of a surface of the substrate exposed in the shading region, and suppressing reflection of out-of-band light with a wavelength of about 140 nm to 800 nm included in the exposure light and incident on the shading region.

    Reflective mask, reflective mask blank, and manufacturing method therefor

    公开(公告)号:US10372029B2

    公开(公告)日:2019-08-06

    申请号:US15138960

    申请日:2016-04-26

    Abstract: There are provided a reflective mask and a reflective mask blank reducing reflection of out-of-band light and a manufacturing method therefor. A light shielding frame is formed on a mask region corresponding to a multiply exposed boundary region between a chip and a semiconductor substrate. The frame is provided with an antireflective layer causing surface reflection in antiphase to out-of-band light reflected from the surfaces of a rear-surface conductive film and the substrate to provide a reflective mask reducing reflection of out-of-band light. The antireflective layer of the present disclosure has an electrical conductivity of 1×104/mΩ or greater to minimize charging occurring in a pattern region in observing the region using an electron microscope.

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