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公开(公告)号:US20180096980A1
公开(公告)日:2018-04-05
申请号:US15562501
申请日:2016-03-29
Applicant: TORAY ENGINEERING CO., LTD.
Inventor: Noboru ASAHI , Yoshiyuki ARAI , Yoshinori MIYAMOTO , Shimpei AOKI , Masatsugu NIMURA
CPC classification number: H01L25/50 , B28D5/029 , H01L21/67092 , H01L21/67144 , H01L21/78 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/05571 , H01L2224/13009 , H01L2224/13082 , H01L2224/13116 , H01L2224/16145 , H01L2224/2919 , H01L2224/32145 , H01L2224/73104 , H01L2224/73204 , H01L2224/75252 , H01L2224/7598 , H01L2224/81203 , H01L2224/81815 , H01L2224/83191 , H01L2224/83203 , H01L2224/83862 , H01L2224/83907 , H01L2224/9205 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06565 , H01L2224/81 , H01L2224/83 , H01L2924/00014 , H01L2924/00
Abstract: A method for manufacturing a semiconductor device includes laminating a plurality of semiconductor wafers via an adhesive, heating such that the adhesive reaches a specific viscosity, and pressing the semiconductor wafers under a provisional pressure bonding load such that a gap between solder of through-electrodes provided to chip parts and through-electrodes of an adjacent semiconductor wafer falls within a specific range that is greater than zero, to produce a provisional pressure-bonded laminate; cutting the provisional pressure-bonded laminate with a cutter to produce a provisional pressure-bonded laminate chip part; and heating the provisional pressure-bonded laminate chip part to at least curing temperature of the adhesive and at least melting point of the solder, and pressing the provisional pressure-bonded laminate chip part under a main pressure bonding load to produce a main pressure-bonded laminate chip part such that the solder comes into contact with the through-electrodes of adjacent chip parts.