公开(公告)号：US20180096980A1

公开(公告)日：2018-04-05

申请号：US15562501

申请日：2016-03-29

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Noboru ASAHI ,  Yoshiyuki ARAI ,  Yoshinori MIYAMOTO ,  Shimpei AOKI ,  Masatsugu NIMURA

IPC: H01L25/00 ,  H01L21/78 ,  H01L23/00

CPC classification number: H01L25/50 ,  B28D5/029 ,  H01L21/67092 ,  H01L21/67144 ,  H01L21/78 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/05571 ,  H01L2224/13009 ,  H01L2224/13082 ,  H01L2224/13116 ,  H01L2224/16145 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75252 ,  H01L2224/7598 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/9205 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device includes laminating a plurality of semiconductor wafers via an adhesive, heating such that the adhesive reaches a specific viscosity, and pressing the semiconductor wafers under a provisional pressure bonding load such that a gap between solder of through-electrodes provided to chip parts and through-electrodes of an adjacent semiconductor wafer falls within a specific range that is greater than zero, to produce a provisional pressure-bonded laminate; cutting the provisional pressure-bonded laminate with a cutter to produce a provisional pressure-bonded laminate chip part; and heating the provisional pressure-bonded laminate chip part to at least curing temperature of the adhesive and at least melting point of the solder, and pressing the provisional pressure-bonded laminate chip part under a main pressure bonding load to produce a main pressure-bonded laminate chip part such that the solder comes into contact with the through-electrodes of adjacent chip parts.

公开(公告)号：US20250015039A1

公开(公告)日：2025-01-09

申请号：US18892975

申请日：2024-09-23

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Tatsuya OKADA ,  Koichi KAZAMA ,  Toshiyuki JINDA ,  Yoshiyuki ARAI

IPC: H01L23/00 ,  H01L21/67

Abstract: A bonding device is configured to bond a first element and a second element. The bonding device comprises an activating unit configured to activate a first bonding surface, which is a bonding surface of the first element, and a second bonding surface, which is a bonding surface of the second element, and a bonding unit configured to irradiate an active energy ray to cause the first bonding surface and the second bonding surface to come closer and bond with each other, from a state in which the first bonding surface and the second bonding surface face each other with a prescribed gap therebetween.

公开(公告)号：US20200298270A1

公开(公告)日：2020-09-24

申请号：US16086099

申请日：2017-03-28

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Satoshi TOMOEDA ,  Yoshiyuki ARAI

IPC: B05C11/10 ,  B05C5/02 ,  B05D1/26 ,  B41M7/00

Abstract: A continuous coating device for continuously conveying a long film includes a coating roll, an imaging device and a coating head. The long film is wound onto the coating roll. The imaging device is configured to capture an image of a mark or a pattern on the long film wound onto the coating roll. The coating head is configured to coat the long film wound onto the coating roll with a specific pattern. The coating head is disposed downstream from the imaging device in a conveyance direction of the long film.

公开(公告)号：US20210280440A1

公开(公告)日：2021-09-09

申请号：US16326512

申请日：2017-08-23

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Yoshiyuki ARAI

IPC: H01L21/67 ,  H01L21/683 ,  H01L23/00 ,  H01L33/00

Abstract: A mounting method is a method for mounting a diced semiconductor chip having a first face that is held on a carrier substrate and a second face that is an opposite face of the first face on a circuit board placed on a mounting table. The mounting method includes affixing the second face of the semiconductor chip to an adhesive sheet, removing the carrier substrate from the semiconductor chip, reducing an adhesive strength of the adhesive sheet, and mounting the semiconductor chip on the circuit board by holding a first face side of the semiconductor chip with a head to separate the semiconductor chip from the adhesive sheet, and joining a second face side of the semiconductor chip to the circuit board.

公开(公告)号：US20250014936A1

公开(公告)日：2025-01-09

申请号：US18893241

申请日：2024-09-23

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Koichi KAZAMA ,  Tatsuya OKADA ,  Toshiyuki JINDA ,  Yoshiyuki ARAI

IPC: H01L21/683

Abstract: A transfer device transfers an element held on a transfer substrate to a receiving substrate. The transfer device comprises an energy irradiation unit irradiating an active energy ray toward the element through the transfer substrate in a state in which the transfer substrate and the receiving substrate face each other across the element. The transfer substrate has a blistering layer in which a blister is generated due to irradiation of an active energy ray. The receiving substrate has a capture layer that is arranged facing the transfer substrate. The energy irradiation unit forms the blister in an element holding area to change a tilt of the element relative to the transfer substrate and to bring the element closer to the receiving substrate, thereby causing the a portion of the element to come in contact with the capture layer first, in a state in which the blistering layer holds the element.

公开(公告)号：US20230360936A1

公开(公告)日：2023-11-09

申请号：US18355484

申请日：2023-07-20

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Koichi KAZAMA ,  Yoshiyuki ARAI ,  Jun INAGAKI

IPC: H01L21/67 ,  B32B43/00 ,  B23K26/57 ,  B23K26/067

CPC classification number: H01L21/67144 ,  B32B43/006 ,  B23K26/57 ,  B23K26/067 ,  B32B2310/0843

Abstract: A transfer device is provided that comprises a transfer substrate holding unit, a receiving substrate holding unit, and an active energy ray irradiation unit. The transfer substrate holding unit holds a transfer substrate with an ablation layer on which at least one element is held. The receiving substrate holding unit holds a receiving substrate such that the ablation layer of the transfer substrate is opposite the receiving substrate. The active energy ray irradiation unit irradiates the ablation layer of the transfer substrate with an active energy ray to cause ablation for transferring the at least one element held by the ablation layer from the transfer substrate to the receiving substrate. The active energy ray irradiation unit irradiates the ablation layer with the active energy ray at a plurality of locations in a holding region of the ablation layer that holds one of the at least one element.

公开(公告)号：US20190221466A1

公开(公告)日：2019-07-18

申请号：US16364833

申请日：2019-03-26

Applicant: TORAY ENGINEERING CO., LTD.

Inventor： Yoshiyuki ARAI

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/62 ,  H01L23/00

Abstract: A transfer method for transferring LED chips, a first surface of which is held on a transfer substrate, on a transfer-target substrate is provided that comprises disposing the transfer-target substrate such that the transfer-target substrate faces, across a gap, a second surface of the LED chips on an opposite side from the first surface of the LED chips, and transferring the LED chips on the transfer-target substrate by irradiating the transfer substrate with a laser light to separate the LED chips from the transfer substrate and by urging the LED chips toward the transfer-target substrate. At least the transferring of the LED chips to the transfer-target substrate being executed in a vacuum environment.