公开(公告)号：US20240072230A1

公开(公告)日：2024-02-29

申请号：US18502023

申请日：2023-11-05

Applicant: InnoLux Corporation

Inventor： Shun-Yuan HU ,  Ming-I Chao

IPC: H01L33/62 ,  H01L23/00 ,  H01L25/075 ,  H01L33/36

CPC classification number: H01L33/62 ,  H01L24/75 ,  H01L24/80 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/36 ,  H01L2224/75651 ,  H01L2224/75841 ,  H01L2224/7598 ,  H01L2224/80805 ,  H01L2224/95115 ,  H01L2224/97

Abstract: An electronic device is provided, including a substrate and a plurality of electronic units disposed on the substrate. The substrate includes a first edge extending along a first direction and a second edge extending along a second direction. The electronic units include first, second, and third electronic units arranged adjacently along the first direction. The first electronic unit is closer to the second edge than the third electronic unit. A pitch between the second and third electronic units is greater than a pitch between the first and second electronic units. The electronic units include fourth, fifth and sixth electronic units arranged adjacently along the second direction. The fourth electronic unit is closer to the first edge than the sixth electronic unit. A pitch between the fourth and fifth electronic units is greater than a pitch between the fifth and sixth electronic units.

公开(公告)号：US20240047410A1

公开(公告)日：2024-02-08

申请号：US18126858

申请日：2023-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngja KIM

IPC: H01L23/00 ,  B23K1/00 ,  B23K1/015 ,  B23K3/08 ,  B23K3/047

CPC classification number: H01L24/75 ,  H01L24/97 ,  H01L24/81 ,  B23K1/0016 ,  B23K1/015 ,  B23K3/087 ,  B23K3/047 ,  H01L2224/75272 ,  H01L2224/75804 ,  H01L2224/75984 ,  H01L2224/7598 ,  H01L2224/97 ,  H01L2224/95092 ,  H01L2224/81092 ,  H01L2224/759 ,  H01L2224/81815 ,  H01L2224/81211 ,  H01L2224/81908 ,  H01L21/561

Abstract: A solder reflow apparatus includes a vapor generating chamber configured to accommodate a heat transfer fluid and to accommodate saturated vapor generated by heating the heat transfer fluid; a heater configured to heat the heat transfer fluid accommodated in the vapor generating chamber; a substrate stage configured to be movable upward and downward within the vapor generating chamber, the substrate stage including a seating surface; vapor passages penetrating the substrate stage and configured to allow the vapor to move therethrough; and suction passages penetrating the substrate stage to be open to the seating surface and in which at least a partial vacuum is generated.

公开(公告)号：US20230378121A1

公开(公告)日：2023-11-23

申请号：US18318836

申请日：2023-05-17

Applicant: Tokyo Electron Limited

Inventor： Yuhei Matsuo

IPC: H01L23/00 ,  H04N23/56 ,  H04N23/90 ,  G06T7/73 ,  G06T7/00 ,  H04N23/10 ,  G06T7/90

CPC classification number: H01L24/75 ,  H01L24/94 ,  H01L24/83 ,  H04N23/56 ,  H04N23/90 ,  G06T7/73 ,  G06T7/0004 ,  H04N23/10 ,  G06T7/90 ,  H01L24/32 ,  H01L24/29 ,  H01L2224/29186 ,  H01L2924/0544 ,  H01L2924/0504 ,  H01L2924/059 ,  H01L2224/94 ,  H01L2224/32145 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/7598 ,  H01L2224/8313 ,  H01L2224/8316 ,  H01L2224/83896 ,  H01L2224/8301 ,  H01L2224/7501 ,  G06T2207/30204 ,  G06T2207/30148 ,  G06T2207/10024 ,  G06T2207/10152

Abstract: A bonding apparatus bonds a first substrate having a first alignment mark and a second substrate having a second alignment mark. A first radiation unit radiates white light to an imaging area of a first imaging unit when the second alignment mark is imaged by the first imaging unit. A second radiation unit radiates white light to an imaging area of a second imaging unit when the first alignment mark is imaged by the second imaging unit. A controller detects positions of the first alignment mark and the second alignment mark by processing images obtained by the first imaging unit and the second imaging unit, corrects the detected position of the first alignment mark based on a relationship between a wavelength and an intensity of reflection light reflected from the first substrate, and controls a moving unit based on the corrected position of the first alignment mark.

公开(公告)号：US11735545B2

公开(公告)日：2023-08-22

申请号：US17365634

申请日：2021-07-01

Applicant: VueReal Inc.

Inventor： Gholamreza Chaji ,  Ehsanollah Fathi

IPC: H01L21/683 ,  H01L23/00 ,  H01L21/687 ,  H01L25/00 ,  G01R31/26 ,  H01L21/66 ,  H05K13/04

CPC classification number: H01L24/08 ,  H01L21/68714 ,  H01L24/29 ,  H01L24/83 ,  H01L24/95 ,  H01L24/97 ,  G01R31/2635 ,  H01L21/6831 ,  H01L21/6835 ,  H01L22/14 ,  H01L22/20 ,  H01L24/27 ,  H01L24/32 ,  H01L24/75 ,  H01L25/50 ,  H01L2221/68322 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/08238 ,  H01L2224/27002 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29019 ,  H01L2224/2919 ,  H01L2224/29026 ,  H01L2224/29078 ,  H01L2224/32237 ,  H01L2224/7598 ,  H01L2224/75252 ,  H01L2224/75253 ,  H01L2224/83005 ,  H01L2224/8314 ,  H01L2224/8316 ,  H01L2224/8318 ,  H01L2224/83121 ,  H01L2224/83141 ,  H01L2224/83143 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83234 ,  H01L2224/83238 ,  H01L2224/83862 ,  H01L2224/83902 ,  H01L2224/95 ,  H01L2224/95001 ,  H01L2224/97 ,  H05K13/0411

Abstract: A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.

公开(公告)号：US11728306B2

公开(公告)日：2023-08-15

申请号：US17569893

申请日：2022-01-06

Applicant: VueReal Inc.

Inventor： Gholamreza Chaji ,  Ehsanollah Fathi

IPC: H01L23/00 ,  H01L21/687 ,  H01L25/00 ,  G01R31/26 ,  H01L21/683 ,  H01L21/66 ,  H05K13/04

CPC classification number: H01L24/08 ,  H01L21/68714 ,  H01L24/29 ,  H01L24/83 ,  H01L24/95 ,  H01L24/97 ,  G01R31/2635 ,  H01L21/6831 ,  H01L21/6835 ,  H01L22/14 ,  H01L22/20 ,  H01L24/27 ,  H01L24/32 ,  H01L24/75 ,  H01L25/50 ,  H01L2221/68322 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/08238 ,  H01L2224/27002 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29019 ,  H01L2224/2919 ,  H01L2224/29026 ,  H01L2224/29078 ,  H01L2224/32237 ,  H01L2224/7598 ,  H01L2224/75252 ,  H01L2224/75253 ,  H01L2224/83005 ,  H01L2224/8314 ,  H01L2224/8316 ,  H01L2224/8318 ,  H01L2224/83121 ,  H01L2224/83141 ,  H01L2224/83143 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83234 ,  H01L2224/83238 ,  H01L2224/83862 ,  H01L2224/83902 ,  H01L2224/95 ,  H01L2224/95001 ,  H01L2224/97 ,  H05K13/0411

Abstract: A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.

公开(公告)号：US20180342485A1

公开(公告)日：2018-11-29

申请号：US15514078

申请日：2017-03-07

Applicant: Shenzhen China Star Optoelectronics Technology Co. ,Ltd.

Inventor： Lixuan CHEN

IPC: H01L25/075 ,  H01L33/48

CPC classification number: H01L25/0753 ,  H01L24/75 ,  H01L33/0079 ,  H01L33/48 ,  H01L2224/75651 ,  H01L2224/7598 ,  H01L2933/0033

Abstract: The present disclosure relates to a micro light emitting diode (Micro LED) transfer-printing device. A heating device and a movable cooling device are arranged on a rack, wherein a cooling surface of the cooling device is opposite to a heating surface of the heating device. A roller mechanism is arranged between the heating device and the cooling device, and a cyclically rotatable conveyor belt is configured on the roller mechanism. A temperature control glue is configured on an outer surface of the conveyor belt. Compared with the conventional solution, the proposed Micro LED transfer-printing device realizes cyclic absorption and transfer-printing of the Micro LED such that the transfer-printing efficiency may be enhanced.

公开(公告)号：US10020282B2

公开(公告)日：2018-07-10

申请号：US14395876

申请日：2013-04-24

Applicant: NISSAN MOTOR CO., LTD. ,  Sanken Electric Co., Ltd.

Inventor： Satoshi Tanimoto ,  Yusuke Zushi ,  Yoshinori Murakami ,  Kohei Matsui ,  Shinji Sato ,  Yu Fukushima

IPC: H01L23/00 ,  B23K37/04 ,  H05K3/34 ,  H05K13/04

CPC classification number: H01L24/83 ,  B23K37/0426 ,  H01L24/05 ,  H01L24/29 ,  H01L24/75 ,  H01L24/97 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05639 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29118 ,  H01L2224/29144 ,  H01L2224/75101 ,  H01L2224/75305 ,  H01L2224/7531 ,  H01L2224/75314 ,  H01L2224/75315 ,  H01L2224/75317 ,  H01L2224/7532 ,  H01L2224/75756 ,  H01L2224/7598 ,  H01L2224/75981 ,  H01L2224/83022 ,  H01L2224/83048 ,  H01L2224/83075 ,  H01L2224/83101 ,  H01L2224/832 ,  H01L2224/83211 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1037 ,  H01L2924/1067 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/3656 ,  H05K3/34 ,  H05K3/3431 ,  H05K13/0465 ,  H05K2203/0195 ,  H05K2203/0278 ,  H01L2924/00 ,  H01L2924/0542 ,  H01L2924/0103 ,  H01L2924/00014 ,  H01L2924/01042 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01013 ,  H01L2224/05655 ,  H01L2224/83 ,  H01L2924/00012

Abstract: In a heat insulating load jig 11 of the present invention, a solder material 14 having a melting point or a solidus temperature in a range between a thermal resistance temperature of a semiconductor chip 13 and a temperature 100° C. below the thermal resistance temperature is interposed between a circuit board 12 and the semiconductor chip 13; a heat insulating body 17 is placed on an upper side of the semiconductor chip 13 in this state; a metal weight 16 is disposed on the heat insulating body 17; and load is applied to the semiconductor chip 13 while the solder material 14 is melted and solidified.

公开(公告)号：US20180068982A1

公开(公告)日：2018-03-08

申请号：US15800127

申请日：2017-11-01

Applicant: Infineon Technologies AG

Inventor： Alexander Heinrich

IPC: H01L25/065 ,  H01L21/683

CPC classification number: H01L25/0655 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/4827 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/544 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/05687 ,  H01L2224/06183 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27334 ,  H01L2224/27436 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/2916 ,  H01L2224/29166 ,  H01L2224/29171 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/75102 ,  H01L2224/75251 ,  H01L2224/75265 ,  H01L2224/75303 ,  H01L2224/75753 ,  H01L2224/7598 ,  H01L2224/83002 ,  H01L2224/83005 ,  H01L2224/83007 ,  H01L2224/83024 ,  H01L2224/83055 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/8309 ,  H01L2224/83091 ,  H01L2224/83092 ,  H01L2224/83101 ,  H01L2224/83127 ,  H01L2224/83132 ,  H01L2224/83143 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83208 ,  H01L2224/83222 ,  H01L2224/83385 ,  H01L2224/83424 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/8381 ,  H01L2224/83815 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83907 ,  H01L2224/83986 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01015 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15157 ,  H01L2924/157 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01074 ,  H01L2924/01024 ,  H01L2924/01023 ,  H01L2924/01027

Abstract: A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

公开(公告)号：US09842817B2

公开(公告)日：2017-12-12

申请号：US14554354

申请日：2014-11-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Su-Chun Yang ,  Yi-Li Hsiao ,  Chih-Hang Tung ,  Chen-Hua Yu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L21/78 ,  B23K1/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/11 ,  B23K1/0016 ,  H01L21/78 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L24/75 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1183 ,  H01L2224/1184 ,  H01L2224/11848 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16506 ,  H01L2224/16507 ,  H01L2224/75252 ,  H01L2224/75317 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/75843 ,  H01L2224/7598 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8193 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2224/81 ,  H01L2924/00

Abstract: A wafer-level pulling method includes securing a top holder to a plurality of chips; and securing a bottom holder to a wafer, wherein the plurality of chips are bonded to the wafer by a plurality of solder bumps. The wafer-level pulling method further includes softening the plurality of solder bumps; and stretching the plurality of softened solder bumps.

公开(公告)号：US20170271192A1

公开(公告)日：2017-09-21

申请号：US15616676

申请日：2017-06-07

Applicant: Apple Inc.

Inventor： Dariusz Golda ,  Andreas Bibl

IPC: H01L21/683 ,  B32B38/18 ,  B81C99/00 ,  H01L21/266 ,  H01L21/308 ,  H01L21/762 ,  H01L23/00 ,  H01L29/06 ,  H02N13/00 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872

CPC classification number: H01L21/6833 ,  B32B38/18 ,  B81C99/002 ,  H01L21/266 ,  H01L21/3083 ,  H01L21/76264 ,  H01L24/75 ,  H01L29/06 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/66348 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/7598 ,  H01L2924/1461 ,  H02N13/00 ,  Y10T156/17

Abstract: A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.