公开(公告)号：US20210083214A1

公开(公告)日：2021-03-18

申请号：US16630759

申请日：2018-09-25

Applicant: TORAY INDUSTRIES, INC.

Inventor： Daisuke SAKII ,  Seiichiro MURASE ,  Junji WAKITA

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10 ,  C08G77/58 ,  C08G77/44 ,  C08K3/22 ,  C08K3/04 ,  C08K3/08 ,  G06K19/07

Abstract: A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.

公开(公告)号：US20180356729A1

公开(公告)日：2018-12-13

申请号：US16075864

申请日：2017-03-15

Applicant: TORAY INDUSTRIES, INC.

Inventor： Yugo TANIGAKI ,  Daisuke SAKII ,  Satoshi KAMEMOTO

IPC: G03F7/037 ,  G03F7/004 ,  H05B33/22 ,  H05K3/28

CPC classification number: G03F7/037 ,  G03F7/004 ,  G03F7/0047 ,  G03F7/027 ,  H01L51/50 ,  H05B33/12 ,  H05B33/22 ,  H05K3/287

Abstract: To provide a negative-type photosensitive resin composition that is highly sensitive and capable of formation of a low-taper pattern shape and that is capable of providing a cured film that is excellent in heat resistance. A negative-type photosensitive resin composition contains an (A) alkali-soluble resin, a (B) radical polymerizable compound, and a (C) photo initiator, the negative-type photosensitive resin composition being characterized in that the (A) alkali-soluble resin contains one or more species of resins selected from a (A-1) polyimide, a (A-2) polybenzoxazole, a (A-3) polyimide precursor, a (A-4) polybenzoxazole precursor, a (A-5) polysiloxane, and a (A-6) cardo based resin, and that the (B) radical polymerizable compound contains a compound having five ethylenic unsaturated bond groups in a (B-1) molecule, in an amount within the range of 51 to 99 mass %.

公开(公告)号：US20200035925A1

公开(公告)日：2020-01-30

申请号：US16498325

申请日：2018-02-28

Applicant: TORAY INDUSTRIES, INC.

Inventor： Kazuki ISOGAI ,  Seiichiro MURASE ,  Daisuke SAKII

IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05 ,  G06K19/07

Abstract: A problem addressed by the present invention is to provide a semiconductor device that is free from deterioration over time, is stable, and has n-type semiconductor characteristics. A main object of the present invention is to provide a semiconductor device that is characterized by including: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer insulating the semiconductor layer from the gate electrode; and a second insulating layer in contact with the semiconductor layer on the opposite side of the semiconductor layer from the gate insulating layer; wherein the semiconductor layer contains a carbon nanotube; wherein the second insulating layer contains an electron-donating material having one or more selected from a nitrogen atom and a phosphorus atom; and wherein the second insulating layer has an oxygen permeability of 4.0 cc/(m2·24 h·atm) or less.

公开(公告)号：US20190378998A1

公开(公告)日：2019-12-12

申请号：US16462447

申请日：2017-11-16

Applicant: TORAY INDUSTRIES, INC.

Inventor： Daisuke SAKII ,  Seiichiro MURASE ,  Junji WAKITA

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10 ,  G06K19/07

Abstract: A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.