公开(公告)号：US20180224392A1

公开(公告)日：2018-08-09

申请号：US15748819

申请日：2016-08-08

Applicant: TORAY INDUSTRIES, INC.

Inventor： Kazuki ISOGAI ,  Seiichiro MURASE ,  Hiroji SHIMIZU

IPC: G01N27/414 ,  H01L51/05 ,  H01L51/00

CPC classification number: G01N27/4145 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/126 ,  G01N27/3275 ,  G01N27/3278 ,  G01N27/414 ,  G01N27/4146 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0094 ,  H01L51/05 ,  H01L51/0545

Abstract: The present invention is to provide a semiconductor element achieving a high-level detection sensitivity when utilized as a sensor. The present invention relates to a semiconductor element including an organic film, a first electrode, a second electrode, and a semiconductor layer, in which the first electrode, the second electrode and the semiconductor layer are formed on the organic film, the semiconductor layer is arranged between the first electrode and the second electrode, the semiconductor layer contains a carbon nanotube, and the organic film has a water contact angle of 5° or more and 50° or less.

公开(公告)号：US20200035925A1

公开(公告)日：2020-01-30

申请号：US16498325

申请日：2018-02-28

Applicant: TORAY INDUSTRIES, INC.

Inventor： Kazuki ISOGAI ,  Seiichiro MURASE ,  Daisuke SAKII

IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05 ,  G06K19/07

Abstract: A problem addressed by the present invention is to provide a semiconductor device that is free from deterioration over time, is stable, and has n-type semiconductor characteristics. A main object of the present invention is to provide a semiconductor device that is characterized by including: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer insulating the semiconductor layer from the gate electrode; and a second insulating layer in contact with the semiconductor layer on the opposite side of the semiconductor layer from the gate insulating layer; wherein the semiconductor layer contains a carbon nanotube; wherein the second insulating layer contains an electron-donating material having one or more selected from a nitrogen atom and a phosphorus atom; and wherein the second insulating layer has an oxygen permeability of 4.0 cc/(m2·24 h·atm) or less.

公开(公告)号：US20190101507A1

公开(公告)日：2019-04-04

申请号：US16082136

申请日：2017-04-12

Applicant: TORAY Industries, Inc.

Inventor： Kazuki ISOGAI ,  Seiichiro MURASE ,  Kazumasa NAGAO

IPC: G01N27/414 ,  H01L51/00 ,  H01L51/05 ,  H01L29/16 ,  H01L29/786

Abstract: A semiconductor element including a substrate, a first electrode, a second electrode, and a semiconductor layer disposed between the first electrode and the second electrode, wherein the semiconductor layer contains at least one selected from carbon nanotubes and graphene, and a relationship between a channel length LC and a channel width WC of the semiconductor element is 0.01≤WC/LC≤0.8. A semiconductor element having excellent switching characteristics and high detection sensitivity when used as a sensor is provided.