公开(公告)号：US20190203071A1

公开(公告)日：2019-07-04

申请号：US16314493

申请日：2017-08-23

Applicant: TORAY INDUSTRIES, INC.

Inventor： Fangrong XU ,  Ping LI ,  Takeshi IKEDA ,  Wei SONG ,  Guangnan JIN ,  Masaaki UMEHARA ,  Tsuyoshi KITADA

IPC: C09D183/06 ,  C08G77/16 ,  C08G77/14 ,  C09D5/24 ,  C09D7/20 ,  H01L21/225 ,  H01L21/324 ,  H01L21/02 ,  H01L31/18

Abstract: Provided is a polysiloxane, containing at least one segment selected from molecular structures shown by formula 1 below, wherein in formula 1, Q is an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom; and T is a hydroxyl, an alkyl, an alkyl containing an alcoholic hydroxyl and having less than 12 carbon atoms in the main chain, or an alkyl containing an alcoholic hydroxyl and having less than 12 non-hydrogen atoms in the main chain and containing a heteroatom. A doped slurry and a mask material prepared by using the polysiloxane, on the basis of having a good diffusivity, also have a good barrier property and a small amount of diffusion in air. In addition, according to a manufacturing method for a semiconductor, the diffusion in air of a doped impurity in the doped slurry is further reduced, so that the quality of a doping process can be further improved.

公开(公告)号：US20180011402A1

公开(公告)日：2018-01-11

申请号：US15545912

申请日：2016-01-25

Applicant: TORAY INDUSTRIES, INC.

Inventor： Tomoyuki YUBA ,  Yuki MASUDA ,  Jiake JIN ,  Ping LI

IPC: G03F7/023 ,  G03F7/16 ,  H01L27/12 ,  H01L23/31 ,  H01L23/29 ,  G03F7/40 ,  G03F7/32 ,  G03F7/20 ,  C07C25/18 ,  C08G73/22 ,  C08G73/10 ,  C07D263/56 ,  C07C231/02 ,  C07C215/80 ,  C07C209/74 ,  H05K1/02 ,  H01L27/32

CPC classification number: G03F7/0233 ,  C07C25/18 ,  C07C41/22 ,  C07C67/307 ,  C07C209/74 ,  C07C211/56 ,  C07C213/00 ,  C07C215/80 ,  C07C231/02 ,  C07C231/12 ,  C07C269/06 ,  C07D209/48 ,  C07D263/56 ,  C07D263/62 ,  C08G69/32 ,  C08G73/1017 ,  C08G73/1039 ,  C08G73/1042 ,  C08G73/106 ,  C08G73/1075 ,  C08G73/1082 ,  C08G73/22 ,  C09D179/04 ,  C09D179/08 ,  G03F7/037 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/40 ,  H01L21/027 ,  H01L23/293 ,  H01L23/3157 ,  H01L23/3171 ,  H01L27/1248 ,  H01L27/3258 ,  H01L2224/11 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/48463 ,  H01L2224/73204 ,  H01L2224/73265 ,  H05K1/0298 ,  H05K3/3452 ,  C07C233/80 ,  C07C233/43 ,  C07C271/28 ,  C07C43/225 ,  C07C69/76 ,  H01L2924/00

Abstract: A resin having a small linear thermal expansion coefficient and a low absorbance is provided. The resin is characterized by including at least one structure selected from structures represented by the following general formulae (1) and (2):