公开(公告)号：US20200303641A1

公开(公告)日：2020-09-24

申请号：US16556057

申请日：2019-08-29

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Daisuke IKENO ,  Akihiro KAJITA ,  Atsuko SAKATA

IPC: H01L45/00 ,  H01L27/24

Abstract: According to one embodiment, a storage device includes a first conductive layer, a second conductive layer, a resistance-variable layer, between the first conductive layer and the second conductive layer, that includes germanium, antimony, and tellurium, a first layer, between the resistance-variable layer and the first conductive layer, that includes carbon, a second layer, between the resistance-variable layer and the second conductive layer, that includes carbon, a third layer, between the resistance-variable layer and the first layer, that includes at least one of tungsten nitride or tungsten carbide, and a fourth layer, between the resistance-variable layer and the second layer, that includes at least one of tungsten nitride or tungsten carbide.

公开(公告)号：US20190279932A1

公开(公告)日：2019-09-12

申请号：US16103106

申请日：2018-08-14

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi WAKATSUKI ,  Masayuki KITAMURA ,  Takeshi ISHIZAKI ,  Hiroshi ITOKAWA ,  Daisuke IKENO ,  Kei WATANABE ,  Atsuko SAKATA

IPC: H01L23/522 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/532 ,  H01L21/28 ,  H01L21/768

Abstract: In one embodiment, a semiconductor device includes a first insulator. The device further includes a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen. The device further includes an interconnect material layer provided on a surface of the metal layer.