公开(公告)号：US20190267543A1

公开(公告)日：2019-08-29

申请号：US16117718

申请日：2018-08-30

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuhiro KATONO ,  Takeshi ISHIZAKI ,  Atsuko SAKATA

IPC: H01L45/00

Abstract: According to one embodiment, the semiconductor memory device includes a first electrode, a first material layer, comprising a first material, located on the first electrode, a second material, surrounded by the first material of the first material layer, comprising a phase change material, and a second electrode provided on the first material.

公开(公告)号：US20200286954A1

公开(公告)日：2020-09-10

申请号：US16570230

申请日：2019-09-13

Applicant: Toshiba Memory Corporation

Inventor： Takanori USAMI ,  Takeshi ISHIZAKI ,  Ryohei KITAO ,  Katsuyoshi KOMATSU ,  Takeshi IWASAKI ,  Atsuko SAKATA

IPC: H01L27/24 ,  H01L27/22

Abstract: A storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).

公开(公告)号：US20200083295A1

公开(公告)日：2020-03-12

申请号：US16279971

申请日：2019-02-19

Applicant: Toshiba Memory Corporation

Inventor： Yosuke MURAKAMI ,  Takeshi ISHIZAKI ,  Yusuke ARAYASHIKI ,  Kazuhiko YAMAMOTO ,  Kana HIRAYAMA

IPC: H01L27/24 ,  H01L45/00

Abstract: A storage device includes a first conductor, a resistance variable film, and a second conductor. The resistance variable film includes a first layer and a second layer. The second layer is located on a side opposite to the first conductor with respect to the first layer, contains oxygen, and has conductivity higher than that of the first layer. The second conductor includes a first portion and a second portion. The first portion abuts on the second layer of the resistance variable film. The second portion is separated from the resistance variable film as compared to the first portion. The oxygen content of the first portion is higher than that of the second portion.

公开(公告)号：US20190279932A1

公开(公告)日：2019-09-12

申请号：US16103106

申请日：2018-08-14

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi WAKATSUKI ,  Masayuki KITAMURA ,  Takeshi ISHIZAKI ,  Hiroshi ITOKAWA ,  Daisuke IKENO ,  Kei WATANABE ,  Atsuko SAKATA

IPC: H01L23/522 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/532 ,  H01L21/28 ,  H01L21/768

Abstract: In one embodiment, a semiconductor device includes a first insulator. The device further includes a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen. The device further includes an interconnect material layer provided on a surface of the metal layer.