公开(公告)号：US20180254076A1

公开(公告)日：2018-09-06

申请号：US15700769

申请日：2017-09-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hirofumi MORISE ,  Tsuyoshi KONDO ,  Nobuyuki UMETSU ,  Yasuaki OOTERA ,  Susumu HASHIMOTO ,  Masaki KADO ,  Takuya SHIMADA ,  Michael Arnaud QUINSAT ,  Shiho NAKAMURA

IPC: G11C11/16 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841 ,  H01L43/08

Abstract: According to an embodiment, a magnetic memory includes a first magnetic portion, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes a first portion and a second portion. The controller in a first operation supplies a first current from the first portion toward the second portion. The controller in a second operation supplies a second current to from the second portion toward the first portion. A first electrical resistance value can be different from a second electrical resistance value. The first electrical resistance value is between the second magnetic portion and the portion of the first magnetic portion before the first operation and the second operation are performed. The second electrical resistance value is between the second magnetic portion and the portion of the first magnetic portion after the first operation and the second operation are performed.