公开(公告)号：US20200091081A1

公开(公告)日：2020-03-19

申请号：US16298056

申请日：2019-03-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Akitsugu HATAZAKI ,  Hiroko Tahara ,  Naomi Fukumaki ,  Masayuki Kitamura ,  Takashi Ohashi

IPC: H01L23/532 ,  H01L21/768

Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.

公开(公告)号：US10825770B2

公开(公告)日：2020-11-03

申请号：US16298056

申请日：2019-03-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Akitsugu Hatazaki ,  Hiroko Tahara ,  Naomi Fukumaki ,  Masayuki Kitamura ,  Takashi Ohashi

IPC: H01L21/768 ,  H01L27/11551 ,  H01L27/11521 ,  H01L21/822 ,  H01L27/11578 ,  H01L23/532 ,  H01L21/311

Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate, a stack body including metal films and first insulating films alternately stacked on the semiconductor substrate and including a stepped end portion, conducting films respectively protruding from the metal films on all steps of the end portion, contact portions respectively provided above the conducting films, a second insulating film surrounding side surfaces of the contact portions, and a barrier metal film provided between the second insulating film and the contact portions and between the conducting films and the contact portions. The entire top surfaces of the conducting films are covered by the barrier metal film and the second insulating film.