公开(公告)号：US10950735B2

公开(公告)日：2021-03-16

申请号：US16351245

申请日：2019-03-12

Applicant: Toshiba Memory Corporation

Inventor： Junji Kataoka ,  Tomomasa Ueda ,  Tomoaki Sawabe ,  Keiji Ikeda ,  Nobuyoshi Saito

IPC: H01L29/786 ,  H01L45/00 ,  H01L29/24

Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer and a first layer. The semiconductor layer includes a first portion including a first element and oxygen. The first element includes at least one selected from the group consisting of In, Ga, Zn, Al, Sn, Ti, Si, Ge, Cu, As, and W. The first layer includes a second element including at least one selected from the group consisting of W, Ti, Ta, Mo, Cu, Al, Ag, Hf, Au, Pt, Pd, Ru, Y, V, Cr, Ni, Nb, In, Ga, Zn, and Sn. The first portion includes a first region and a second region. The second region is provided between the first region and the first layer. The first region includes a bond of the first element and oxygen. The second region includes a bond of the first element and a metallic element.

公开(公告)号：US11024719B2

公开(公告)日：2021-06-01

申请号：US16563307

申请日：2019-09-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tomoaki Sawabe ,  Nobuyoshi Saito ,  Junji Kataoka ,  Tomomasa Ueda ,  Keiji Ikeda

IPC: H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/49 ,  H01L29/51 ,  H01L27/24 ,  H01L29/78

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, an oxide semiconductor channel, an insulation layer, an oxide layer, and a gate electrode. The oxide semiconductor channel includes a portion extending along a first direction and connects the first electrode to the second electrode. The insulation layer surrounds the oxide semiconductor channel. The oxide layer covers the oxide semiconductor channel and the insulation layer, and includes an oxide of a metal element. The gate electrode covers the oxide semiconductor channel, the insulation layer, and the oxide layer, and includes the metal element.